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IKD10N60RFATMA1

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: SMD/SMT
Continuous Collector Current at 25 C :: 20 A
Pd - Power Dissipation :: 150 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-252-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 20 V
Packaging :: Reel
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.3 V
Manufacturer :: Infineon Technologies
Description: IGBT Transistors IGBT PRODUCTS
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IKD10N60RFATMA1

The IKD10N60RFATMA1,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

TL061CD

  

OPA1632DR

  

TL062BCDR

  
China IKD10N60RFATMA1 factory
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