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IXYH40N65C3H1

IXYH40N65C3H1
Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 80 A
Pd - Power Dissipation :: 300 W
Collector- Emitter Voltage VCEO Max :: 650 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 30 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.85 V
Manufacturer :: IXYS
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IXYH40N65C3H1

The IXYH40N65C3H1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

XC9572

  

LE82Q965

  

SC16C554DBIA68

  
China IXYH40N65C3H1 factory
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