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IRGS4620DPBF

Categories IGBT Transistors
Gate-Emitter Leakage Current :: +/- 100 nA
Product Category :: IGBT Transistors
Mounting Style :: SMD/SMT
Continuous Collector Current at 25 C :: 32 A
Pd - Power Dissipation :: 140 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-263-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: +/- 30 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.55 V
Manufacturer :: IR / Infineon
Description: IGBT Transistors 600V TRENCH ULTRAFAST IGBT
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IRGS4620DPBF

The IRGS4620DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

74LVC2G126DP

  

EPF6024ABI256-1

  

EPF6024ABI256-2

  
China IRGS4620DPBF factory
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