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  • China J201 JFET N-Channel Transistor General Purpose high power rf transistors factory
    ...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage: - 1.5 V Drain-Source Current at Vgs=0: 80 mA Pd - Power... more
    Brand Name:InterFET
    Model Number:J201
    Place of Origin:USA

    J201 JFET N-Channel Transistor General Purpose high power rf transistors

    Wisdtech Technology Co.,Limited
    [Guangdong,China]
  • China AD9361BBCZ High Power Rf Transistor factory
    ...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power... more
    Brand Name:Analog Devices Inc.
    Model Number:AD9361BBCZ
    Place of Origin:Multi-origin

    AD9361BBCZ High Power Rf Transistor

  • China FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance factory
    FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components... more
    Brand Name:Fuji Electric
    Model Number:FLM0910-25F
    Place of Origin:JP

    FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
  • China Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors factory
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    Brand Name:VBE
    Model Number:VBE36015E2
    Place of Origin:CHINA

    Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors

    VBE Technology Shenzhen Co., Ltd.
    [Guangdong,China]
  • China Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar factory
    Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ... more
    Brand Name:SANYO
    Model Number:2SD1625
    Place of Origin:Philippines

    Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China 150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio factory
    ...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor... more
    Brand Name:original
    Model Number:M68702H
    Place of Origin:Original Manufacturer

    150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio

  • China RF Power Transistors BLC6G22-75 Power LDMOS transistor RF Power Transistors factory
    BLC6G22-75 is a Power LDMOS transistor. Part NO: BLC6G22-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ... more
    Model Number:BLC6G22-75
    Place of Origin:PHILIPPINE

    RF Power Transistors BLC6G22-75 Power LDMOS transistor RF Power Transistors

  • China MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors factory
    MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,... more
    Brand Name:ONSEMI
    Model Number:MMBTA43LT1G
    Place of Origin:Original

    MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors

  • China One Generation High Power RF Connectors SMA To IPEX RF Wire Connection factory
    ...tested and quality controlled prior to shipment Product Details: Product name: DALEE RF Connector Secification: Three generation Type : Female Certification: ISO9001,UL,ROHS and the latest REACH Voltage Rating: 60 VAC ... more
    Brand Name:DALEE
    Model Number:DL50011204
    Place of Origin:Guangdong,China(Mainland)

    One Generation High Power RF Connectors SMA To IPEX RF Wire Connection

    Dalee Electronic Co., Ltd.
    [Guangdong,China]
  • China Wireless Communication Module A5G35S004NT6 48V 24.5 dBm Airfast RF Power GaN Transistor factory
    Wireless Communication Module A5G35S004NT6 48V 24.5 dBm Airfast RF Power GaN Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ... more
    Brand Name:Original Factory
    Model Number:A5G35S004NT6
    Place of Origin:CN

    Wireless Communication Module A5G35S004NT6 48V 24.5 dBm Airfast RF Power GaN Transistor

  • China Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor factory
    ..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ more
    Brand Name:Hua Xuan Yang
    Model Number:G170C03LR1S
    Place of Origin:ShenZhen China

    Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

  • China Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor factory
    ..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ more
    Brand Name:Hua Xuan Yang
    Model Number:G170C03LR1S
    Place of Origin:ShenZhen China

    Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

  • China Waterproof Level IP65 High Power RF Load 100W Input PIM 110DBC N Male Connector factory
    ... Frequency :0-3000G 5. Connector :N Male Type No. D18047 Operating Frequency 0~3000MHz VSWR < 1.2 PIM < -110dBc (@2*43dBm) Power Handling > 100W Connector Type N Male Application Indoor or Outdoor (IP65) Impedance 50Ω Operating Temperature -30ºC~+60ºC more
    Brand Name:LENOLINK
    Model Number:50W RF LOAD with N connector
    Place of Origin:CHINA

    Waterproof Level IP65 High Power RF Load 100W Input PIM 110DBC N Male Connector

    Lenolink Telecommunication Co.,Ltd
    [Guangdong,China]
  • China FDA50N50 High Voltage Mosfet Transistor 48A 500V DMOS AC−DC Power Supply Transistor factory
    ...Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power... more
    Brand Name:onsemi
    Model Number:FDA50N50
    Place of Origin:Original Factory

    FDA50N50 High Voltage Mosfet Transistor 48A 500V DMOS AC−DC Power Supply Transistor

    Shenzhen Retechip Electronics Co., Ltd
    [Guangdong,China]
  • China BFP420H6327XTSA1 Infineon NPN Silicon RF Transistor factory
    ..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ... more
    Description:BFP420H6327XTSA1 BFP420 Overview Parametrics Documents Order Design Support Packaging Support NPN Silicon RF Transist
    Stock:100000
    Type:NPN RF Transistor

    BFP420H6327XTSA1 Infineon NPN Silicon RF Transistor

    Shenzhen Chive Electronics Co., Ltd.
    [Guangdong,China]
  • China RIG High Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor factory
    ...Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor Description: RIG high power resistance is also called RIG RF resistor, RF RF resistor, high frequency RF resistor, flange RF resistor, load RF resistor, RF resistor and high power microband resistors Product characteristics: 1.Small volume, large power capacity, good high-frequency characteristics, reliable performance, and convenient installation. 2.Suitable for power more
    Brand Name:BONENS
    Model Number:RIG Resistor
    Packaging Details:Carton packaging

    RIG High Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor

  • China Complementary 15A 250V 150W PNP Power Bipolar Transistors NJW0302G factory
    ...Power Bipolar Transistors 15A 250V 150W NJW0281G 250V 15A 150W hfe75-150 and NJW0302G 250V 15A 150W hfe75-150 are pair. 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors... more
    Brand Name:ON
    Model Number:NJW0302G
    Place of Origin:USA

    Complementary 15A 250V 150W PNP Power Bipolar Transistors NJW0302G

    DELI ELECTRONICS TECHNOLOGY CO.,LTD
    [Guangdong,China]
  • China Electronic Components Rf Power Mosfet Transistors STPS15L30C-TR STS1DNC45 STV6419AG factory
    Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate ... more
    Brand Name:ST
    Model Number:STPS15L30C-TR STS1DNC45 STV6419AG
    Place of Origin:Original

    Electronic Components Rf Power Mosfet Transistors STPS15L30C-TR STS1DNC45 STV6419AG

    Shenzhen Weitaixu Capacitor Co.,Ltd
    [Guangdong,China]
  • China Customized 4500-5000MHz 100W Low Noise High Power RF Power Amplifier for Telecommunication factory
    ... radio frequency (RF) signals within the C Band frequency range, specifically from 4500 megahertz (MHz) to 5000MHz. Here's a detailed introduction to this RF power amplifier: Frequency Range: This power amplifier operates within the C Band frequency range, more
    Brand Name:SWT
    Model Number:SW-PA-45005000-50C
    Place of Origin:China

    Customized 4500-5000MHz 100W Low Noise High Power RF Power Amplifier for Telecommunication

  • China DC 24V Power PLC Transistor Module , PLC Negative Control DC Amplifier Board factory
    ...Power PLC Transistor Module , PLC Negative Control DC Amplifier Board 1 , the load voltage, current type is different Load type: Transistors can only carry DC loads, while relays can have both AC and DC loads. Current: Transistor Current 0.2A-0.3A, Relay 2A. Voltage: The transistor... more
    Brand Name:GINRI
    Model Number:JR-16J
    Place of Origin:CHINA

    DC 24V Power PLC Transistor Module , PLC Negative Control DC Amplifier Board

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