-
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ...
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ... more
Brand Name:Anterwell
Model Number:BCX56
Place of Origin:original factory
-
BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ...
BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ... more
Brand Name:CJ
Model Number:BCX56-10
Place of Origin:CN
80V 1A SOT89 BCX56-10 NPN Medium Power Transistors
-
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ...
-
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device...
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device... more
Brand Name:Hua Xuan Yang
Model Number:AOD418
Place of Origin:ShenZhen China
Thermal Resistance N Channel Mosfet Switch , Medium Power Transistor
-
...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...
...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power... more
Model Number:PBSS4160T,215
Place of Origin:CN
NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T
-
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ...
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ... more
Brand Name:Analog Devices Inc.
Model Number:HMC442LC3BTR
Place of Origin:Multi-origin
HMC442LC3BTR RF Power Transistor - Great For High Speed Applications
-
NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: ...
-
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...
-
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power more
Brand Name:Hua Xuan Yang
Model Number:4306W-A
Place of Origin:ShenZhen China
Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
-
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications...
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications... more
Brand Name:onsemi
Model Number:SGL160N60UFD
Place of Origin:Original Factory
UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W
-
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •
-
FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specification Of FS300R17OE4B81BPSA1 Part Number ...
FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specification Of FS300R17OE4B81BPSA1 Part Number ... more
Brand Name:Original Factory
Model Number:FS300R17OE4B81BPSA1
Place of Origin:CN
FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors
-
medium power 48v or 60v 1000watt motor Gearbox loading 1000kg rickshaw Rated Power(W) 1000 Rated Voltage(VDC) 48/60 Rated Speed(RPM) 310 No load Speed(RPM) 3700 Rated ...
-
... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall...
... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall... more
Description:MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
Stock:1000PCS
Minimum Order Quantity:1pcs
MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
-
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ... more
Description:Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole MJE182G
Stock:In Stock
Minimum Order Quantity:10
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G
-
...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power
...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power more
Brand Name:NOVA acoustics
Model Number:MA-4400
Place of Origin:Guangzhou, China
4 X 400W AB Class Stereo Power Amplifier 3U With TOSHIBA Power Transistors
-
...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...
...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor... more
Brand Name:INNOTION
Model Number:YP01401650T
Place of Origin:Jiangsu, China
50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
-
...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor...
...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor... more
Brand Name:Diode Triode Transistor
Model Number:TIP137
Place of Origin:USA
TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package
-
...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor
...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor more
Brand Name:Original
Model Number:IPG20N06S4L14AATMA1
Place of Origin:Original
IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V
-
Medium Power Lift gate Maximizing Productivity with Confidence KUGA & Escape2013-2019 RH CJ5Z78406A10B CJ54S402A74AC Product Description: Power Lift Gate The Ford KUGA & Escape 2013-2019 RH Power Lift Gate is equipped with a powerful motor that can hold...