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...Transistor Cigarette Packer Detector Pocket Transistor Radio The first "prototype" pocket transistor radio was shown by INTERMETALL (a company founded by Herbert Mataré in 1952) at the Internationale Funkausstellung Düsseldorf between August 29, 1953 and September 6, 1953. The first "production" pocket transistor radio was the Regency TR-1, released in October 1954. Point-Contact Transistor...
...Transistor Cigarette Packer Detector Pocket Transistor Radio The first "prototype" pocket transistor radio was shown by INTERMETALL (a company founded by Herbert Mataré in 1952) at the Internationale Funkausstellung Düsseldorf between August 29, 1953 and September 6, 1953. The first "production" pocket transistor radio was the Regency TR-1, released in October 1954. Point-Contact Transistor... more
Brand Name:Upperbond
Model Number:Maker
Place of Origin:China
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... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to more
Brand Name:Mitsubishi
Model Number:RA03M8087M-101
Place of Origin:JP
RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package
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...TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO...
...TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO... more
Brand Name:original
Model Number:M68702H
Place of Origin:Original Manufacturer
150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio
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...Radio RF Power Transistor . Part NO: PTB20147 Brand: Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio...
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...Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios...
...Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios... more
Brand Name:Analog Devices Inc.
Model Number:HMC536LP2E
Place of Origin:Multi-origin
HMC536LP2E RF Power Transistors High Performance Low Noise High Gain
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...
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2SC2690 : Use in audio and radio Frequency power amplifiers NEC general purpose transistors DESCRIPTION The 2SC2690, 2SC2690A are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES ●Suitable for use in ...
2SC2690 : Use in audio and radio Frequency power amplifiers NEC general purpose transistors DESCRIPTION The 2SC2690, 2SC2690A are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES ●Suitable for use in ... more
Brand Name:NEC
Model Number:2SC2690
Place of Origin:JAPAN
2SC2690 General Purpose Transistor NEC Frequency Power Amplifier
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2018 fruit machine jammer for sale emp jammer transistor for Europe here to buy it online jammer slot modificado con el transistor e inductor que le hace falta para q de chicha, no me ago responsable de lo que agan con el xahi, los jammer chinos no ...
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... Compliance Code: unknown ECCN Code: EAR99 Manufacturer: LRC Leshan Radio Co Ltd Risk Rank: 5.54 Configuration: SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min: 60 V Drain Current-Max (...
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NPT1012B GaN IC 28V 25W GaN Power Transistor For Land Mobile Radio [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ...
NPT1012B GaN IC 28V 25W GaN Power Transistor For Land Mobile Radio [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ... more
Brand Name:Original Factory
Model Number:NPT1012B
Place of Origin:CN
NPT1012B GaN IC 28V 25W GaN Power Transistor For Land Mobile Radio
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Product Parameters --GaN enables high efficiency and high output. The radio frequency and monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module. --The ...
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... range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The ...
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SZA5044Z Radio Frequency Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits Product Description RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost ...
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6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics...
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Good quality Electronic Component provider from China——GS Electronics, Product Details: AD8361ARMZ Introduction: The AD8361ARMZ is a high-performance logarithmic amplifier designed by Analog Devices. This precision device is engineered to provide accurate...
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BLF174XRS N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF174XRS #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...
BLF174XRS N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF174XRS #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-... more
Brand Name:KAIGENG
Model Number:BLF174XRS
Place of Origin:Malaysia
BLF174XRS Radio Frequency RF Power Transistor Manufacturers
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... as transistor radio medium wave antenna coil. Single layer winding is a kind of winding with only one effective side of coil embedded in each stator slot, so its total ...
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... Battery AM9VF 6LR61 9V 9Volt - Household Batteries The 9V battery is an extremely common battery that was first used in transistor radios. It features a rectangular prism shape that utilizes a pair of snap connectors which are located at the top of the
... Battery AM9VF 6LR61 9V 9Volt - Household Batteries The 9V battery is an extremely common battery that was first used in transistor radios. It features a rectangular prism shape that utilizes a pair of snap connectors which are located at the top of the more
Brand Name:OEM 9 Volt Battery
Model Number:9V Size battery
Place of Origin:China
9V NON rechargeable battery Alkaline 6LR61 Battery 9V battery