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  • China K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification factory
    K4H560438H K4H560838H K4H561638H 256Mb H-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • ... more
    Brand Name:Anterwell
    Model Number:K4H561638H-UCB3
    Place of Origin:original factory

    K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China MT46V16M16P-75:F MICRON DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 66-Pin TSOP Tray factory
    Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No DRAM Type DDR SDRAM Chip Density (bit) 256M Organization 16Mx16 Number of Internal Banks 4 Number of Words per Bank 4M Number of Bits/Word (bit) ... more
    Brand Name:MICRON
    Model Number:MT46V16M16P-75:F
    Place of Origin:CHINA

    MT46V16M16P-75:F MICRON DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 66-Pin TSOP Tray

  • China K4B4G1646E-BYMA Samsung DDR SDRAM Package FBGA-96 ROHS factory
    DDR SDRAM K4B4G1646E-BYMA K4B4G1646E-BYMA Manufacturer Samsung MFR.Part #K4B4G1646E-BYMA JLCPCB Part #C500275 PackageFBGA-96 DescriptionFBGA-96 DDR SDRAM ROHS Datasheet Download SourceJLCPCB Assembly Type SMT Assembly CAD ModelPCB Footprint or Symbol ... more
    Brand Name:SAMSUNG
    Model Number:K4B4G1646E-BYMA
    Place of Origin:KOREAN

    K4B4G1646E-BYMA Samsung DDR SDRAM Package FBGA-96 ROHS

  • China 1-1473005-1 TE Connectivity AMP Connectors SODIMM DDR SDRAM Socket factory
    ...DDR SDRAM Socket Details : 200 Position SODIMM DDR SDRAM Socket Surface Mount, 25° Angle Description: CONN SKT SODIMM 200POS SMD IC Category Connectors, Interconnects 　Series Memory Connectors - Inline Module Sockets MFG 　 TE Connectivity AMP Connectors 　Part number 1-1473005-1 Package 　 Tray Part Status Active Connector Style SODIMM Number of Positions 200 Memory Type DDR more
    Brand Name:TE Connectivity AMP Connectors
    Model Number:1-1473005-1
    Place of Origin:China

    1-1473005-1 TE Connectivity AMP Connectors SODIMM DDR SDRAM Socket

    Angel Technology Electronics Co
    [Hongkong,China]
  • China 1GB DDR SDRAM Memory IC Chip MT29PZZZ8D5WKFMW-18W.6D factory
    MT29PZZZ8D5WKFMW-18W.6D - 1GB DDR SDRAM Find information here in stock.xlsx Introduction: The MT29PZZZ8D5WKFMW-18W.6D is a 1GB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of ... more
    Brand Name:Micron Technology
    Model Number:MT29PZZZ8D5WKFMW-18W.6D
    Certification:ROHS

    1GB DDR SDRAM Memory IC Chip MT29PZZZ8D5WKFMW-18W.6D

  • China MT46V8M16TG-6T IT:D TR Original Integrated Circuit Integrated Circuit Chip DOUBLE DATA RATE DDR SDRAM factory
    ...DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR... more
    Model Number:MT46V8M16
    Place of Origin:original factory

    MT46V8M16TG-6T IT:D TR Original Integrated Circuit Integrated Circuit Chip DOUBLE DATA RATE DDR SDRAM

  • China H5AN8G6NCJR-VKC Memory IC Chip Synchronous Dynamic Random Access Memory FBGA96 DDR SDRAM factory
    H5AN8G6NCJR-VKC Memory IC Chip Synchronous Dynamic Random Access Memory FBGA96 DDR SDRAM [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ... more
    Brand Name:Original Factory
    Model Number:H5AN8G6NCJR-VKC
    Place of Origin:CN

    H5AN8G6NCJR-VKC Memory IC Chip Synchronous Dynamic Random Access Memory FBGA96 DDR SDRAM

  • China W9825G6KH-6 TSOP-54 SDRAM IC Lead free / RoHS Compliant factory
    Winbond Elec W9825G6KH-6 TSOP-54 SDRAM Memory IC Memory IC is an integrated circuit that is designed to store data and program code. It typically includes a range of components, such as memory cells, address decoders, and sense amplifiers. Memory IC common... more
    Brand Name:Winbond
    Model Number:W9825G6KH-6
    Place of Origin:TH/CN/PH

    W9825G6KH-6 TSOP-54 SDRAM IC Lead free / RoHS Compliant

  • China ATM Spare Parts NCR Memory 009-0019311 DIMM, 512 MB, DDR SDRAM, PC2100, CL2.5 , 0090019311 factory
    SPECIFICATION P/N 009-0019311 Brand NCR Keyword ATM Machine ATM Parts Used in ATM Machine Delivery time 1-7 working days Shipment by express / sea / air Payment TT / Western Union / Paypal / Money Gram Condition new/ used Warranty 90 days Other service ... more
    Brand Name:NCR
    Model Number:009-0019311
    Place of Origin:China

    ATM Spare Parts NCR Memory 009-0019311 DIMM, 512 MB, DDR SDRAM, PC2100, CL2.5 , 0090019311

  • China SDRAM - DDR Memory IC MT46V16M16P-5B:M 256Mbit Parallel 200 MHz 700 Ps 66-TSOP Electronic IC Chip factory
    SDRAM - DDR Memory IC MT46V16M16P-5B:M 256Mbit Parallel 200 MHz 700 Ps 66-TSOP Electronic IC Chip PRODUCT DESCRIPTION Part number MT46V16M16P-5B:M is manufactured by Micron Technology Inc and distributed by Stjk. As one of the leading distributors of ... more
    Brand Name:Micron Technology Inc.
    Model Number:MT46V16M16P-5B:M
    Certification:ISO9001

    SDRAM - DDR Memory IC MT46V16M16P-5B:M 256Mbit Parallel 200 MHz 700 Ps 66-TSOP Electronic IC Chip

  • China Micron MT41K256M16TW-107 AIT:P Flash Memory Ic Chip 512Mb DDR3 SDRAM factory
    ...: TSOP-64 Product Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz ... more
    Brand Name:Micron Technology Inc.
    Model Number:MT41K256M16TW-107 AIT:P
    Place of Origin:Multi-origin

    Micron MT41K256M16TW-107 AIT:P Flash Memory Ic Chip 512Mb DDR3 SDRAM

  • China 16Mx16 Parallel Integrated Circuit IC Chip 46V16M16 SDRAM - DDR Memory IC 256Mb factory
    MT46V16M16P-5B:K TR 46V16M16 SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP List Of Other Electronic Components In Stock TLE6250PGV33 INFINEON KGF1155 OKI TC74HC07AP TOSHIBA AD592BN ADI SPX29150T-1-8 SIPEX M30873FHBGP#... more
    Brand Name:Micron Technology Inc.
    Model Number:MT46V16M16P-5B:K TR
    Place of Origin:CHINA

    16Mx16 Parallel Integrated Circuit IC Chip 46V16M16 SDRAM - DDR Memory IC 256Mb

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
  • China Electronic Components DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II IS42S16160G-7TLI Integrated Circuits factory
    Electronic Components DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II IS42S16160G-7TLI Integrated Circuits Options : Package : 54-pin TSOP-II. 54-ball BGA. Operating Temperature Range : Commercial (0oC to +70oC). Industrial (-40oC to +85oC). Automotive ... more
    Brand Name:Integrated Silicon Solution
    Model Number:IS42S16160G-7TLI
    Place of Origin:Shenzhen, China

    Electronic Components DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II IS42S16160G-7TLI Integrated Circuits

    Shenzhen Weitaixu Capacitor Co.,Ltd
    [Guangdong,China]
  • China ISSI Original SDRAM IC Memory Chip 64Mb Parallel 143MHz IS42S16400J-7TLI 54-TSOP factory
    IS42S16400J-7TLI 54-TSOP ISSI Original SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz Description ISSI's 64Mb Synchronous DRAM is organized as1,048,... more
    Brand Name:ISSI
    Model Number:IS42S16400J-7TLI
    Place of Origin:Original Factory

    ISSI Original SDRAM IC Memory Chip 64Mb Parallel 143MHz IS42S16400J-7TLI 54-TSOP

  • China IS42S16320B-7TL SDRAM 64Mb Density 166MHz Speed 3.3V Operation 16Mx16 Organization LVTTL Interface Industrial Temp (-40°C~85°C) Compact TSOP-II Package High Reliability factory
    IS42S16320B-7TL SDRAM 64Mb Density 166MHz Speed 3.3V Operation 16Mx16 Organization LVTTL Interface Industrial Temp (-40°C~85°C) Compact TSOP-II Package High Reliability FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals ... more
    Brand Name:Integrated Silicon Solution
    Model Number:IS42S16320B-7TL
    Place of Origin:China

    IS42S16320B-7TL SDRAM 64Mb Density 166MHz Speed 3.3V Operation 16Mx16 Organization LVTTL Interface Industrial Temp (-40°C~85°C) Compact TSOP-II Package High Reliability

  • China 512M 3.3V SDRAM 32Mx16 166MHz 54 Pin TSOP II DRAM IS42S16320F-6TLI factory
    IS42S16320F-6TLI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 Pin TSOP II (400 Mil) RoHS, IT 1.FEATURES Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a ... more
    Brand Name:ISSI
    Model Number:IS42S16320F-6TLI
    Place of Origin:CHINA

    512M 3.3V SDRAM 32Mx16 166MHz 54 Pin TSOP II DRAM IS42S16320F-6TLI

  • China 256mbit 54 Pin EEPROM Memory HY57V561620FTP-HI Dram Memory Chip SDRAM 16Mx16 3.3V TSOP-II factory
    HY57V561620FTP-HI DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT . The packaging is very safe and strong. Please nitfy me you have any special needs 2, It will take around 3-5 days... more
    Brand Name:SK hynix Inc
    Model Number:HY57V561620FTP-HI
    Certification:Lead free / RoHS Compliant

    256mbit 54 Pin EEPROM Memory HY57V561620FTP-HI Dram Memory Chip SDRAM 16Mx16 3.3V TSOP-II

    J&T ELECTRONICS LTD
    [Hongkong,China]
  • China LP2998MA NOPB DDR Termination Regulator 1.35 V To 5.5 V factory
    ... specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min of 1.35 V. The device contains a high-... more
    Model Number:LP2998MA/NOPB
    Minimum Order Quantity:1 pcs
    Price:Negotiable

    LP2998MA NOPB DDR Termination Regulator 1.35 V To 5.5 V

    XIXIAN FORWARD TECHNOLOGY LTD
    [Shaanxi,China]
  • China memory IC substrate manufacture for DDR/LPDDR factory
    ... device-.Power/Analog IC drive-Control drive IC for portable electronic device;-PDA-Wireless RF-Memory (DDR SDRAM)-Cell phone-Workstation, Server, Video Camera -Desktop PC, Note book PC more
    Brand Name:Horexs
    Model Number:HRX
    Place of Origin:CHINA

    memory IC substrate manufacture for DDR/LPDDR

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