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  • China TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package factory
    TIP137 Logic New Original Bipolar NPN 100V 6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor... more
    Brand Name:Diode Triode Transistor
    Model Number:TIP137
    Place of Origin:USA

    TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package

  • China TIP41C Transistor TIP41C TIP42C NPN Bipolar Power Transistor 100V 6A 2W TO-220 factory
    ... Transistor Type NPN Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V Power - ... more
    Brand Name:Original
    Model Number:TIP41C
    Place of Origin:US

    TIP41C Transistor TIP41C TIP42C NPN Bipolar Power Transistor 100V 6A 2W TO-220

  • China Darlington Bipolar Mosfet Power Transistor TIP147 10A Current 100V Voltage factory
    ...Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors... more
    Brand Name:ON / ST / FSC
    Model Number:TIP147
    Place of Origin:Original Factory

    Darlington Bipolar Mosfet Power Transistor TIP147 10A Current 100V Voltage

  • China UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W factory
    IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications... more
    Brand Name:onsemi
    Model Number:SGL160N60UFD
    Place of Origin:Original Factory

    UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W

    Shenzhen Retechip Electronics Co., Ltd
    [Guangdong,China]
  • China MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G factory
    MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ... more
    Description:Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole MJE182G
    Stock:In Stock
    Minimum Order Quantity:10

    MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G

    Angel Technology Electronics Co
    [Hongkong,China]
  • China DTC143ZCA Bipolar Junction Transistor Rated Power 200mW 100mA factory
    Bipolar Junction Transistor DTC143ZCA Rated power 200 mW Collector maximum allowable current 100mA Product description Part number DTC143ZCA is manufactured by CJ Company and distributed by AYE. As one of the leading distributors of electronic products, we... more
    Brand Name:CJ
    Model Number:DTC143ZCA
    Place of Origin:Shenzhen,China

    DTC143ZCA Bipolar Junction Transistor Rated Power 200mW 100mA

    AYE TECHNOLOGY CO., LIMITED
    [Guangdong,China]
  • China 2SB649A Power Mosfet Transistor Bipolar Power General Purpose Transistor factory
    2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL ... more
    Brand Name:Anterwell
    Model Number:2SB649A
    Place of Origin:original factory

    2SB649A Power Mosfet Transistor Bipolar Power General Purpose Transistor

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China RF Power Transistors MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS factory
    Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ... more
    Brand Name:MOT
    Model Number:MRF15060S
    Place of Origin:PHILIPPINE

    RF Power Transistors MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS

  • China DarliCM GROUPon Bipolar Mosfet Power Transistor TIP147 10A Current 100V Voltage factory
    ...Transistors TO-3P TIP147 10A 100V PNP DarliCM GROUPon Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors... more
    Brand Name:ON / ST / FSC
    Model Number:TIP147
    Place of Origin:Original Factory

    DarliCM GROUPon Bipolar Mosfet Power Transistor TIP147 10A Current 100V Voltage

  • China ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors factory
    ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN ... more
    Brand Name:Diodes Incorporated
    Model Number:ZXTN25100BFHTA
    Place of Origin:USA

    ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

    Wisdtech Technology Co.,Limited
    [Guangdong,China]
  • China Multifunctional Power Transistor And IGBT High Voltage 1200V 40A factory
    ... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters: more
    Brand Name:REASUNOS
    Place of Origin:Guangdong, CN
    Price:Confirm price based on product

    Multifunctional Power Transistor And IGBT High Voltage 1200V 40A

  • China PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor factory
    ...Bipolar BJT Transistor Discrete Semiconductors PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power... more
    Brand Name:Nexperia USA Inc
    Model Number:PBHV8540X,115
    Minimum Order Quantity:1 piece

    PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor

    Guangzhou Topfast Technology Co., Ltd.
    [Guangdong,China]
  • China 2N3439 Bipolar Junction Transistor IC Chip Through Hole TO393 factory
    ...Bipolar Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 500 mV Maximum DC Collector Current: 1 A Pd - Power more
    Brand Name:original
    Model Number:2N3439
    Place of Origin:original

    2N3439 Bipolar Junction Transistor IC Chip Through Hole TO393

  • China Integrated Circuit Chip IXBH10N300HV 3000V Monolithic Bipolar MOS Transistor 180W factory
    ... MOS Transistor. Specification Of IXBH10N300HV Part Number IXBH10N300HV Voltage - Collector Emitter Breakdown (Max) 3000 V Current - Collector (Ic) (Max) 34 A Current - Collector Pulsed (Icm) 88 A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A Power - Max 180 W more
    Brand Name:Original Factory
    Model Number:IXBH10N300HV
    Place of Origin:CN

    Integrated Circuit Chip IXBH10N300HV 3000V Monolithic Bipolar MOS Transistor 180W

  • China AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions factory
    AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ... more
    Brand Name:Analog Devices Inc.
    Model Number:AD9364BBCZ
    Place of Origin:Multi-origin

    AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions

  • China MMBT3904-7-F Bipolar (BJT) Transistor NPN 40 V 200 MA 300MHz 300 MW SOT-23-3 factory
    MMBT3904-7-F Bipolar (BJT) Transistor NPN 40 V 200 MA 300MHz 300 MW SOT-23-3 Category Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Mfr Diodes Incorporated Series Automotive, AEC-Q101 Transistor Type NPN Current - Collector (Ic) (Max... more
    Brand Name:Diodes Incorporated
    Model Number:MMBT3904-7-F
    Place of Origin:USA

    MMBT3904-7-F Bipolar (BJT) Transistor NPN 40 V 200 MA 300MHz 300 MW SOT-23-3

  • China 30P06D TO-252 High Power Transistor , Custom Field Effect Transistor factory
    ...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power... more
    Brand Name:Hua Xuan Yang
    Model Number:30P06D TO-252
    Place of Origin:ShenZhen China

    30P06D TO-252 High Power Transistor , Custom Field Effect Transistor

  • China Low Gate Charge Mosfet Power Transistor For Inverter Systems Management factory
    ...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power more
    Brand Name:Hua Xuan Yang
    Model Number:4306W-A
    Place of Origin:ShenZhen China

    Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

  • China IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor factory
    ... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density • more
    Brand Name:Original brand
    Model Number:IGT60R070D1ATMA1
    Place of Origin:Original

    IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

    Shenzhen Weitaixu Capacitor Co.,Ltd
    [Guangdong,China]
  • China NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T factory
    ...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power... more
    Model Number:PBSS4160T,215
    Place of Origin:CN

    NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
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