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  • China SRAM Static Random Access Memory 32Mb CY7C1079DV33-12BAXI FBGA-48 factory
    ...Memory Storage capacity: 32 Mbit Organization: 4M x 8 Access time: 12 ns Interface Type: Parallel Supply Voltage - Max: 3.3 V Supply voltage - Min: 3 V Supply Current—Maximum: ... more
    Brand Name:Infineon Technologies
    Model Number:CY7C1079DV33-12BAXI
    Place of Origin:Germany

    SRAM Static Random Access Memory 32Mb CY7C1079DV33-12BAXI FBGA-48

    Eastern Stor International Ltd.
    [Guangdong,China]
  • China Memory IC Chip AS6C1616C-45TINTR 16Mb Low Power CMOS Static Random Access Memory factory
    Memory IC Chip AS6C1616C-45TINTR 16Mb Low Power CMOS Static Random Access Memory [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ... more
    Brand Name:Original Factory
    Model Number:AS6C1616C-45TINTR
    Place of Origin:CN

    Memory IC Chip AS6C1616C-45TINTR 16Mb Low Power CMOS Static Random Access Memory

  • China Integrated Circuit Chip 512K x 8 Bit Static Random Access Memory MCM6246WJ20 MOTOROLA SOJ factory
    ...Static Random Access Memory . Part NO: MCM6246WJ20 Brand: 　MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The Northbridge typically handles communications among the CPU, in some cases RAM, and PCI Express (or AGP) video cards, and the Sourthbridge. Some Northbridges also contain integrated video controllers, also known as a Graphics and Memory more
    Brand Name:MOTOROLA
    Model Number:MCM6246WJ20
    Place of Origin:Malaysia

    Integrated Circuit Chip 512K x 8 Bit Static Random Access Memory MCM6246WJ20 MOTOROLA SOJ

  • China CY62256LL-70SNC CY62256LL CY62256 New And Original SOP28 Static Random Access Memory Chip CY62256LL-70SNC factory
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    Brand Name:Original
    Model Number:CY62256LL-70SNC
    Place of Origin:Guangdong, China

    CY62256LL-70SNC CY62256LL CY62256 New And Original SOP28 Static Random Access Memory Chip CY62256LL-70SNC

  • China 2Gb F Die DRAM Memory Chip Dynamic Random Access Memory DDR3 X16 K4B2G1646F-BCMA factory
    Dynamic Random Access Memory DRAM 2Gb F-die DDR3 SDRAM X16 K4B2G1646F-BCMA JEDEC standard 1.5v + 0.075V Power Supply VDoo = 1.... more
    Brand Name:SAMSUNG
    Model Number:K4B2G1646F-BCMA
    Place of Origin:KR

    2Gb F Die DRAM Memory Chip Dynamic Random Access Memory DDR3 X16 K4B2G1646F-BCMA

  • China AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage factory
    AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ... more
    Brand Name:Original
    Model Number:AS4C32M16SC-7TIN
    Place of Origin:Original

    AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage

  • China Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory factory
    Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory Hot Sale Ferromagnetic Random Access Memory Food X-Ray Inspection And Detection Machine X-ray Sundries Screening Machine X-ray Inspection System for Packaged Goods & Unpackaged ... more
    Brand Name:Easyweigh
    Model Number:FXR-4017K100
    Place of Origin:China

    Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory

  • China H9HCNNNBPUMLHR NMO Synchronous Dynamic Random Access Memory factory
    ... NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR... more
    Brand Name:SKHYNIX
    Model Number:H9HCNNNBPUMLHR- NMO
    Place of Origin:KOREA

    H9HCNNNBPUMLHR NMO Synchronous Dynamic Random Access Memory

  • China MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic Random Access Memory factory
    MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the leading distributors of electronic products... more
    Brand Name:MICRON
    Model Number:MT53D512M32D2DS-053 AIT:D
    Place of Origin:Shenzhen,China

    MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic Random Access Memory

    AYE TECHNOLOGY CO., LIMITED
    [Guangdong,China]
  • China W9825G6KH-6 TSOP-54 Synchronous Dynamic Random Access Memory 256Mbit RAM Memory Chip factory
    #detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px... more
    Brand Name:original
    Model Number:W9825G6KH-6
    Place of Origin:original

    W9825G6KH-6 TSOP-54 Synchronous Dynamic Random Access Memory 256Mbit RAM Memory Chip

  • China 2666Mhz Server Memory Ram 4G 8G DDR4 2133 ECC 2400 Random Access factory
    RAM DDR4 4G 8G 16G 32G ECC 2133 2400 2666 Mhz Random Access Server Memory Certifications Beijing Guangtian Runze Technology Co., Ltd. was established in March 2012, with a registered capital of 20 million yuan. Mainly engaged in the ... more
    Model Number:32G 16G 8G
    Place of Origin:China
    Packaging Details:box

    2666Mhz Server Memory Ram 4G 8G DDR4 2133 ECC 2400 Random Access

  • China AS7C34098A-10JIN IC SRAM 4MBIT PARALLEL 44SOJ Alliance Memory, Inc. factory
    ...Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access... more
    Brand Name:Alliance Memory, Inc.
    Model Number:AS7C34098A-10JIN
    Minimum Order Quantity:1

    AS7C34098A-10JIN IC SRAM 4MBIT PARALLEL 44SOJ Alliance Memory, Inc.

  • China A623308M-70SF Integrated Circuit Chip 8K X 8 BIT CMOS SRAM memory IC factory
    ...: Operating: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three more
    Brand Name:Anterwell
    Model Number:A623308M-70SF
    Place of Origin:original factory

    A623308M-70SF Integrated Circuit Chip 8K X 8 BIT CMOS SRAM memory IC

  • China FM16W08-SGTR Integrated Circuit IC Chip - 8Kb EEPROM Memory With SPI Interface factory
    ... Static Random Access Memory (SRAM) in space-saving 8-pin plastic SOP package with an access time of 15ns. Features: • Low power consumption • Wide voltage range: 1.8V to 3.6V • High performance: 15ns access time • Low cost • 1Mbit capacity... more
    Brand Name:CYPRESS
    Model Number:FM16W08-SGTR
    Place of Origin:Multi-origin

    FM16W08-SGTR Integrated Circuit IC Chip - 8Kb EEPROM Memory With SPI Interface

  • China A623308M-70SF Integrated Circuit Chip 8K X 8 BIT CMOS SRAM memory IC factory
    ...: Operating: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three more
    Brand Name:Anterwell
    Model Number:A623308M-70SF
    Place of Origin:original factory

    A623308M-70SF Integrated Circuit Chip 8K X 8 BIT CMOS SRAM memory IC

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China JS28F320J3F75A FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 75ns 56-TSOP factory
    ... FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 75ns 56-TSOP Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 32Mb (4M x 8, 2M x 16) Write Cycle Time - Word, Page 75ns Access Time 75ns Memory Interface Parallel... more
    Brand Name:Micron Technology Inc.
    Model Number:JS28F320J3F75A
    Place of Origin:CHINA

    JS28F320J3F75A FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 75ns 56-TSOP

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
  • China FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface factory
    ... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ... more
    Brand Name:CYPRESS
    Model Number:FM24CL04B
    Place of Origin:Original Factory

    FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

  • China H5PS5162FFR-G7C H5PS1G63JFR-Y5J H5TQ4G63CFR-TEC Flash Memory IC Chip factory
    ...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ... more
    Brand Name:Hynix
    Model Number:Hynix Memory IC
    Place of Origin:South Korea, China

    H5PS5162FFR-G7C H5PS1G63JFR-Y5J H5TQ4G63CFR-TEC Flash Memory IC Chip

  • China FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp and 8-lead TSSOP factory
    ... I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp andamp; 8-lead TSSOP andnbsp; Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K andtimes; 8 andnbsp; ❐ High-... more
    Brand Name:Infineon
    Model Number:FM24CL64B-GTR
    Place of Origin:China

    FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp and 8-lead TSSOP

  • China IC FM24W256-G Replace EEPROM Memory FRAM IC SOP8 256k Integrated Circuits Electronic Component New and original IC factory
    ...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories... more
    Brand Name:Original
    Model Number:FM24W256-G
    Place of Origin:US

    IC FM24W256-G Replace EEPROM Memory FRAM IC SOP8 256k Integrated Circuits Electronic Component New and original IC

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