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Product Technical Specifications EU RoHS Compliant ECCN (US) 3A991b.2.a. Part Status Active Automotive No PPAP No Chip Density (bit) 18M Number of Words 512K Number of Bits/Word (bit) 36 Architecture Pipelined Data Rate Architecture SDR Address Bus Width (...
Product Technical Specifications EU RoHS Compliant ECCN (US) 3A991b.2.a. Part Status Active Automotive No PPAP No Chip Density (bit) 18M Number of Words 512K Number of Bits/Word (bit) 36 Architecture Pipelined Data Rate Architecture SDR Address Bus Width (... more
Brand Name:ISSI
Model Number:IS61LPS51236A-200B3LI
Place of Origin:CHINA
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...DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS5122GABHI020 Part Number: S80KS5122GABHI020 Wrapped Burst Lengths: 64 Bytes (32 Clocks) Linear Burst: 64 Mb Technology: PSRAM (Pseudo SRAM) Access Time: 35 Ns Operating Temperature Range -
...DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS5122GABHI020 Part Number: S80KS5122GABHI020 Wrapped Burst Lengths: 64 Bytes (32 Clocks) Linear Burst: 64 Mb Technology: PSRAM (Pseudo SRAM) Access Time: 35 Ns Operating Temperature Range - more
Brand Name:Original Factory
Model Number:S80KS5122GABHI020
Place of Origin:CN
200MHz Pseudo SRAM Memory IC S80KS5122GABHI020 FBGA24 Integrated Circuit Chip
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...Chip ASIC Alternative • 3,000 to 54,000 System Gates • Up to 2.5 kbits Configurable Dual-Port SRAM • Fast Wide-Decode Circuitry • Up to 202 User-Programmable I/O Pins High Performance • 5.6 ns Clock-to-Out • 250 MHz Performance • 5 ns Dual-Port SRAM Access • 100 MHz FIFOs • 7.5 ns...
...Chip ASIC Alternative • 3,000 to 54,000 System Gates • Up to 2.5 kbits Configurable Dual-Port SRAM • Fast Wide-Decode Circuitry • Up to 202 User-Programmable I/O Pins High Performance • 5.6 ns Clock-to-Out • 250 MHz Performance • 5 ns Dual-Port SRAM Access • 100 MHz FIFOs • 7.5 ns... more
Model Number:A42MX16-PQG100I
Place of Origin:original factory
A42MX16-PQG100I Programmable IC Chips 40MX and 42MX FPGA Families
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DS1230Y-150+ 256kb (32 k x 8) 150 ns Commercial Temp Non-Volatile SRAM - DIP-28 Description : The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium ...
DS1230Y-150+ 256kb (32 k x 8) 150 ns Commercial Temp Non-Volatile SRAM - DIP-28 Description : The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium ... more
Brand Name:Maxim Integrated
Model Number:DS1230Y-150+
Place of Origin:Shenzhen, China
DS1230Y 150 256kb Ic Memory Chip 32 K X 8 150 Ns Commercial Temp Non Volatile
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...Chip ASIC Alternative • 3,000 to 54,000 System Gates • Up to 2.5 kbits Configurable Dual-Port SRAM • Fast Wide-Decode Circuitry • Up to 202 User-Programmable I/O Pins High Performance • 5.6 ns Clock-to-Out • 250 MHz Performance • 5 ns Dual-Port SRAM Access • 100 MHz FIFOs • 7.5 ns...
...Chip ASIC Alternative • 3,000 to 54,000 System Gates • Up to 2.5 kbits Configurable Dual-Port SRAM • Fast Wide-Decode Circuitry • Up to 202 User-Programmable I/O Pins High Performance • 5.6 ns Clock-to-Out • 250 MHz Performance • 5 ns Dual-Port SRAM Access • 100 MHz FIFOs • 7.5 ns... more
Brand Name:Anterwell
Model Number:A42MX16-PQG100I
Place of Origin:original factory
A42MX16-PQG100I Programmable IC Chips 40MX and 42MX FPGA Families
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■ TSOP I package configurable as 1M × 16 or 2M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V ■ Automatic power-down when deselected ■ CMOS for optimum speed and power ■ Offered...
■ TSOP I package configurable as 1M × 16 or 2M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V ■ Automatic power-down when deselected ■ CMOS for optimum speed and power ■ Offered... more
Brand Name:Original
Model Number:CY62167EV30LL-45ZXI
Place of Origin:Original
CY62167EV30LL-45ZXI Original and new SRAM 16Mb 3V 45ns 1M 16 LP ic chip
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Electronic IC Chip IDT71V3556SA133BQG SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 Ns 165-CABGA PRODUCT DESCRIPTION Part number IDT71V3556SA133BQG is manufactured by Renesas Electronics America Inc and distributed by Stjk. As one ...
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...IC Chip Low Power Memory for High Performance Computing Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 2Mbit Memory Organization 128K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 55ns Access Time 55 ns ...
...IC Chip Low Power Memory for High Performance Computing Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 2Mbit Memory Organization 128K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 55ns Access Time 55 ns ... more
Brand Name:CYPRESS
Model Number:CY62137FV18LL-55BVXI
Place of Origin:original
CY62137FV18LL-55BVXI IC Chip Low Power Memory For High Performance Computing
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SRAM 4Mb 10ns 3.3V 512Kx8 Fast Async SRAM Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: SRAM RoHS: Details Memory Size: 4 Mbit Organization: 512 k x 8 Access Time: 10 ns Maximum Clock Frequency: 100 MHz ...
SRAM 4Mb 10ns 3.3V 512Kx8 Fast Async SRAM Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: SRAM RoHS: Details Memory Size: 4 Mbit Organization: 512 k x 8 Access Time: 10 ns Maximum Clock Frequency: 100 MHz ... more
Brand Name:Infineon
Model Number:CY7C1049DV33-10ZSXIT
Minimum Order Quantity:1000
CY7C1049DV33-10ZSXIT SRAM 4Mb 10ns 3.3V 512Kx8 Fast Async SRAM
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Quick Detail: 256K SRAM Description: The LH52256C is a Static RAM organized as 32,768 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology Applications: • 32,768 × 8 bit organization • Access time: 70 ...
Quick Detail: 256K SRAM Description: The LH52256C is a Static RAM organized as 32,768 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology Applications: • 32,768 × 8 bit organization • Access time: 70 ... more
Brand Name:Sharp Electrionic Components
Model Number:LH52256CN-70LL
Place of Origin:PHILIPPINE
Flash Memory IC Chip LH52256CN-70LL - Sharp Electrionic Components - 256K SRAM
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Product Details Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs...
Product Details Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs... more
Brand Name:Cypress Semiconductor Corp
Model Number:CY7C128A-45PC
Minimum Order Quantity:1
CY7C128A-45PC IC SRAM 16KBIT PARALLEL 24DIP Cypress Semiconductor Corp
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...Chip 16k Nonvolatile SRAM Full Series for DS1220Y-100+120+150+200 IND FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write access times as fast as 100 ns...
...Chip 16k Nonvolatile SRAM Full Series for DS1220Y-100+120+150+200 IND FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write access times as fast as 100 ns... more
Brand Name:DALLAS
Model Number:DS1220Y-100
Place of Origin:USA
DS1220Y- 100 Extended Module DIP24 Clock Chip 16k Nonvolatile SRAM 720MIL
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IS62C256AL-45ULI-TR MemoryType Volatile MemoryFormat SRAM Technology SRAM - Asynchronous MemorySize 256Kb (32K x 8) MemoryInterface Parallel ClockFrequency - WriteCycleTime-WordPage 45ns AccessTime 45 ns Voltage-Supply 4.5V ~ 5.5V OperatingTemperature -40...
IS62C256AL-45ULI-TR MemoryType Volatile MemoryFormat SRAM Technology SRAM - Asynchronous MemorySize 256Kb (32K x 8) MemoryInterface Parallel ClockFrequency - WriteCycleTime-WordPage 45ns AccessTime 45 ns Voltage-Supply 4.5V ~ 5.5V OperatingTemperature -40... more
Brand Name:ISSI, Integrated Silicon Solution Inc
Model Number:IS62C256AL-45ULI-TR
Minimum Order Quantity:1PCS
IS62C256AL-45ULI-TR
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SRAM - Asynchronous Memory IC 1Mbit Parallel 15 ns 32-TSOP II
SRAM - Asynchronous Memory IC 1Mbit Parallel 15 ns 32-TSOP II more
Category:Integrated Circuits (ICs)
Memory
Memory
Product Status:Active
Mounting Type:Surface Mount
71V124SA15PHG