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  • China AP12N10D Power Switch Transistor , Original Silicon Power Transistor factory
    ...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power more
    Brand Name:Hua Xuan Yang
    Model Number:AP12N10D
    Place of Origin:ShenZhen China

    AP12N10D Power Switch Transistor , Original Silicon Power Transistor

  • China MJ21194 COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA RF Power Transistors factory
    MJ21194 is a COMPLEMENTARY SILICON POWER TRANSISTORS . Part NO: MJ21194 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products... more
    Brand Name:MOTOROLA
    Model Number:MJ21194
    Place of Origin:MALAYSIA

    MJ21194 COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA RF Power Transistors

  • China Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G factory
    Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ... more
    Brand Name:ONSEMI
    Model Number:MJ15025G
    Place of Origin:Mexico

    Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS factory
    ...Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where ... more
    Description:MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS
    Stock:1000PCS
    Minimum Order Quantity:1pcs

    MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS

    Wisdtech Technology Co.,Limited
    [Guangdong,China]
  • China 600mA Silicon Power Transistor NPN Power Transistor High Current factory
    ...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power... more
    Brand Name:OTOMO
    Model Number:A42
    Place of Origin:ShenZhen China

    600mA Silicon Power Transistor NPN Power Transistor High Current

  • China Heat Dissipation High Power MOSFET Silicon Power Transistors factory
    ...Power MOSFET Silicon Power Transistors Product Description: One of the most important features of this MOSFET is its high switching speed. This allows it to quickly and efficiently switch power on and off, which is critical in many high-performance applications. Whether you are working with a high-frequency switching power supply or another high-power application, the High Power... more
    Brand Name:Lingxun
    Place of Origin:China
    Certification:IATF16949,ISO9001,ISO14001,ROHS,REACH

    Heat Dissipation High Power MOSFET Silicon Power Transistors

  • China MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors factory
    MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4403LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4403LT1G SOT−23 (... more
    Brand Name:ONSEMI
    Model Number:MMBT4403LT1G
    Place of Origin:Original

    MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors

  • China MJE3055T TO-220 Complementary Silicon Plastic Power Transistors factory
    ...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor... more
    Brand Name:SAIKELI
    Model Number:MJE3055T
    Place of Origin:China

    MJE3055T TO-220 Complementary Silicon Plastic Power Transistors

  • China IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET factory
    ...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power... more
    Brand Name:Infineon Technologies
    Model Number:IRF3205PBF
    Place of Origin:Original

    IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET

    Shenzhen Retechip Electronics Co., Ltd
    [Guangdong,China]
  • China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers factory
    ... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 more
    Brand Name:Mitsubishi
    Model Number:RD06HVF1
    Place of Origin:CN

    RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
  • China P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free factory
    ...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power... more
    Brand Name:Infineon
    Model Number:IRF5210PBF
    Place of Origin:Original Factory

    P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

  • China 2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor factory
    2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;... more
    Brand Name:NEC
    Model Number:2SC2987
    Place of Origin:JAPAN

    2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor

    DELI ELECTRONICS TECHNOLOGY CO.,LTD
    [Guangdong,China]
  • China 1 N-Channel MSC060SMA070B4 700V Silicon Carbide Transistors TO-247-4 Power MOSFET factory
    ...Transistors in a TO-247 4-lead package with a source sense. Specification Of MSC060SMA070B4 Part Number: MSC060SMA070B4 Technology: SiC Mounting Style: Through Hole Package / Case: TO-247-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - more
    Brand Name:Original Factory
    Model Number:MSC060SMA070B4
    Place of Origin:CN

    1 N-Channel MSC060SMA070B4 700V Silicon Carbide Transistors TO-247-4 Power MOSFET

  • China Industrial Silicon Carbide Power Transistors High Frequency Multipurpose factory
    ...Silicon Carbide MOSFETs, also known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency electronic components used in a wide variety of applications, including Solar Inverters, High-voltage DC/DC Converters, Motor Drivers, UPS Power Supplies, Switching Power Supplies, and Charging Piles. Featuring an N-type silicon... more
    Brand Name:REASUNOS
    Place of Origin:Guangdong, CN
    Minimum Order Quantity:600

    Industrial Silicon Carbide Power Transistors High Frequency Multipurpose

  • China Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 factory
    Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING... more
    Brand Name:Huixin
    Model Number:MMBT3906 SOT-23
    Place of Origin:China

    Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23

  • China IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor factory
    ... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density • more
    Brand Name:Original brand
    Model Number:IGT60R070D1ATMA1
    Place of Origin:Original

    IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

    Shenzhen Weitaixu Capacitor Co.,Ltd
    [Guangdong,China]
  • China Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS factory
    ... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ... more
    Brand Name:original
    Model Number:SIHB22N60E-E3
    Place of Origin:Original Manufacturer

    Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS

  • China MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate factory
    ...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor... more
    Brand Name:Original
    Model Number:FQPF18N60C
    Part no.:FQPF18N60C

    MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate

  • China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor factory
    ...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor... more
    Brand Name:INNOTION
    Model Number:YP01401650T
    Place of Origin:Jiangsu, China

    50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

  • China 4 X 400W AB Class Stereo Power Amplifier 3U With TOSHIBA Power Transistors factory
    ...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power more
    Brand Name:NOVA acoustics
    Model Number:MA-4400
    Place of Origin:Guangzhou, China

    4 X 400W AB Class Stereo Power Amplifier 3U With TOSHIBA Power Transistors

    Guangzhou Nova Acoustics Co., Ltd.
    [Guangdong,China]
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