One Generation High Power RF Connectors SMA To IPEX RF Wire Connection
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...tested and quality controlled prior to shipment Product Details: Product name: DALEE RF Connector Secification: Three generation Type : Female Certification: ISO9001,UL,ROHS and the latest REACH Voltage Rating: 60 VAC ......
Dalee Electronic Co., Ltd.
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100W High Power RF Load IP65 Water Protection PIM 15DBC In 2G , 3G , 4G
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...high power RF Load waterproof IP67 with PIM 150dBc 4.3-10 female connector used in 2G,3G,4G 1. 200w high power RF load , the PIM is 150-160dBc .With very good performance . 2. The VSWR is <1.2 3. Intermodulation is 150-160dBc@2X43dBm 4. IP 67 , outsider , good waterproof. 5. Frequency :0-3000G New features 1. Integrates 2 ~8 Wireless Bands 2. More than 50~100 dB Input Isolation 3. High Average Power......
Lenolink Telecommunication Co.,Ltd
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Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor
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Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor Description The RIG22 is a high-performance power resistor engineered for applications requiring precision, durability, and superior heat resistance. Manufactured by BOCHEN, the RIG22 features a robust ceramic core structure with flame-retardant coating, ensuring excellent thermal conductivity and mechanical stability under continuous load. With a power......
Sichuan Bochen Guosheng Intelligent Technology Co., Ltd.
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RIG High Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor
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...High Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor Description: RIG high power resistance is also called RIG RF resistor, RF RF resistor, high frequency RF resistor, flange RF resistor, load RF resistor, RF resistor and high power microband resistors Product characteristics: 1.Small volume, large power capacity, good high-frequency characteristics, reliable performance, and convenient installation. 2.Suitable for power...
Sichuan Qixing Electronics Co., Ltd.
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High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement
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High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier provides exceptional power......
Nanjing Shinewave Technology Co., Ltd.
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500Mhz-2400MHz High Power RF Amplifier Smaller Size LAN 28V DC
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500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA......
Kimpok Technology Co., Ltd
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500Mhz-2400MHz High Power RF Amplifier Smaller Size LAN 28V DC
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500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA......
Shenzhen dingshen Industrial Co., Ltd
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High Power RF Jamming Module - Working Frequency 20MHz~6GHz Current ≤6.0A
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High Power RF Jamming Module - Working Frequency 20MHz~6GHz Current ≤6.0A Product Description: Our High Power RF Jamming Module is a powerful 50W Blocking Power Amplifier Module designed specifically for use in communication systems. It is capable of delivering an output power......
EASTLONGE ELECTRONICS(HK) CO.,LTD
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PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors
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... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ......
Mega Source Elec.Limited
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J201 JFET N-Channel Transistor General Purpose high power rf transistors
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...high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage: - 1.5 V Drain-Source Current at Vgs=0: 80 mA Pd - Power......
Wisdtech Technology Co.,Limited
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