• China MT53E512M32D1ZW-046 WT:B Memory IC Chip 16Gbit Dynamic Random Access Memory IC factory
    ... memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM. Specification Of MT53E512M32D1ZW-046 WT:B Part Number: MT53E512M32D1ZW-046 WT:B Memory Format: DRAM Memory Size: 16Gbit Memory Interface: Parallel Write Cycle Time - Word, more
    Brand Name:Original Factory
    Model Number:MT53E512M32D1ZW-046 WT:B
    Place of Origin:CN

    MT53E512M32D1ZW-046 WT:B Memory IC Chip 16Gbit Dynamic Random Access Memory IC

  • China SRAM Static Random Access Memory 32Mb CY7C1079DV33-12BAXI FBGA-48 factory
    ...Memory Storage capacity: 32 Mbit Organization: 4M x 8 Access time: 12 ns Interface Type: Parallel Supply Voltage - Max: 3.3 V Supply voltage - Min: 3 V Supply Current—Maximum: ... more
    Brand Name:Infineon Technologies
    Model Number:CY7C1079DV33-12BAXI
    Place of Origin:Germany

    SRAM Static Random Access Memory 32Mb CY7C1079DV33-12BAXI FBGA-48

  • China AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage factory
    AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ... more
    Brand Name:Original
    Model Number:AS4C32M16SC-7TIN
    Place of Origin:Original

    AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage

  • China Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory factory
    Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory Hot Sale Ferromagnetic Random Access Memory Food X-Ray Inspection And Detection Machine X-ray Sundries Screening Machine X-ray Inspection System for Packaged Goods & Unpackaged ... more
    Brand Name:Easyweigh
    Model Number:FXR-4017K100
    Place of Origin:China

    Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory

  • China H9HCNNNBPUMLHR NMO Synchronous Dynamic Random Access Memory factory
    ... NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR... more
    Brand Name:SKHYNIX
    Model Number:H9HCNNNBPUMLHR- NMO
    Place of Origin:KOREA

    H9HCNNNBPUMLHR NMO Synchronous Dynamic Random Access Memory

  • China Integrated Circuit Chip 512K x 8 Bit Static Random Access Memory  MCM6246WJ20 MOTOROLA SOJ factory
    ...Random Access Memory . Part NO: MCM6246WJ20 Brand:  MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The Northbridge typically handles communications among the CPU, in some cases RAM, and PCI Express (or AGP) video cards, and the Sourthbridge. Some Northbridges also contain integrated video controllers, also known as a Graphics and Memory more
    Brand Name:MOTOROLA
    Model Number:MCM6246WJ20
    Place of Origin:Malaysia

    Integrated Circuit Chip 512K x 8 Bit Static Random Access Memory MCM6246WJ20 MOTOROLA SOJ

  • China MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic Random Access Memory factory
    MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the leading distributors of electronic products... more
    Brand Name:MICRON
    Model Number:MT53D512M32D2DS-053 AIT:D
    Place of Origin:Shenzhen,China

    MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic Random Access Memory

    AYE TECHNOLOGY CO., LIMITED
    [Guangdong,China]
  • China CY62256LL-70SNC CY62256LL CY62256 New And Original SOP28 Static Random Access Memory Chip CY62256LL-70SNC factory
    #detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root .... more
    Brand Name:Original
    Model Number:CY62256LL-70SNC
    Place of Origin:Guangdong, China

    CY62256LL-70SNC CY62256LL CY62256 New And Original SOP28 Static Random Access Memory Chip CY62256LL-70SNC

  • China 2666Mhz Server Memory Ram 4G 8G DDR4 2133 ECC 2400 Random Access factory
    RAM DDR4 4G 8G 16G 32G ECC 2133 2400 2666 Mhz Random Access Server Memory Certifications Beijing Guangtian Runze Technology Co., Ltd. was established in March 2012, with a registered capital of 20 million yuan. Mainly engaged in the ... more
    Model Number:32G 16G 8G
    Place of Origin:China
    Packaging Details:box

    2666Mhz Server Memory Ram 4G 8G DDR4 2133 ECC 2400 Random Access

  • China 7 Inch Semi Automatic Bio Chemistry Analyzer Random Access With 10 Incubators 3 Timers Color LCD Touch Screen factory
    7 inch Semi Automatic Biochemical Analyzer Random access with10 incubators 3 timers Color LCD Touch screen ​ Feature 7inch Color LCD Touch screen 10 incubators ... more
    Brand Name:ZECEN
    Model Number:NEO-S
    Place of Origin:Jiangsu, China

    7 Inch Semi Automatic Bio Chemistry Analyzer Random Access With 10 Incubators 3 Timers Color LCD Touch Screen

  • China Access Memory Tripod Turnstile Gate factory
    Security semi-automatic waterproof three arm motor-free tripod turnstile suitable for outdoor Specifications of Tripod Turnstile Gate: Item Specification Power supply 100V TO 240V Power consumption 40W Access device input voltage Dry contact or 12V ... more
    Brand Name:OEM
    Model Number:OEM
    Place of Origin:China mainland

    Access Memory Tripod Turnstile Gate

  • China AS7C34098A-10JIN IC SRAM 4MBIT PARALLEL 44SOJ Alliance Memory, Inc. factory
    ...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access... more
    Brand Name:Alliance Memory, Inc.
    Model Number:AS7C34098A-10JIN
    Minimum Order Quantity:1

    AS7C34098A-10JIN IC SRAM 4MBIT PARALLEL 44SOJ Alliance Memory, Inc.

  • China M29W640FB70N6E Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory factory
    ... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7 more
    Model Number:M29W640FB
    Place of Origin:original factory

    M29W640FB70N6E Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

  • China FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface factory
    ... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ... more
    Brand Name:CYPRESS
    Model Number:FM24CL04B
    Place of Origin:Original Factory

    FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

  • China MT46V16M16P-5B:M Flash Memory Chips 45 Bytes of Non Volatile Storage Capacity factory
    ... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ... more
    Brand Name:Micron Technology Inc.
    Model Number:MT46V16M16P-5B:M
    Place of Origin:original

    MT46V16M16P-5B:M Flash Memory Chips 45 Bytes of Non Volatile Storage Capacity

  • China H5PS5162FFR-G7C H5PS1G63JFR-Y5J  H5TQ4G63CFR-TEC Flash Memory IC Chip factory
    ...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ... more
    Brand Name:Hynix
    Model Number:Hynix Memory IC
    Place of Origin:South Korea, China

    H5PS5162FFR-G7C H5PS1G63JFR-Y5J H5TQ4G63CFR-TEC Flash Memory IC Chip

  • China Monolithic Flash Memory IC 64KB FM1608-120 Bytewide Fram Memory factory
    ... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in ... more
    Brand Name:original
    Model Number:FM1608-120
    Place of Origin:Original Factory

    Monolithic Flash Memory IC 64KB FM1608-120 Bytewide Fram Memory

  • China Reliance Electric 57C423 AutoMax Multibus system Common Memory Module 128K Memory Made in USA factory
    ... Function Common Memory Module Memory Capacity 128K Memory Memory Type Typically static random-access memory (SRAM) The Reliance Electric 57C423 Common Memory Module with 128K Memory is versatile and finds application in various industrial automation and more
    Description:Reliance Electric 57C423 AutoMax Multibus system Common Memory Module 128K Memory Made in USA
    Stock:in stock
    Minimum Order Quantity:1pc

    Reliance Electric 57C423 AutoMax Multibus system Common Memory Module 128K Memory Made in USA

  • China M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory factory
    ... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7 more
    Brand Name:Anterwell
    Model Number:M29W640FB
    Place of Origin:original factory

    M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China IC FM24W256-G Replace EEPROM Memory FRAM IC SOP8 256k Integrated Circuits Electronic Component New and original IC factory
    ...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories... more
    Brand Name:Original
    Model Number:FM24W256-G
    Place of Origin:US

    IC FM24W256-G Replace EEPROM Memory FRAM IC SOP8 256k Integrated Circuits Electronic Component New and original IC

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