Categories | Integrated Circuit Components |
---|---|
Brand Name: | Infineon |
Model Number: | IRF7420TRPBF |
Certification: | CE, GCF, ROHS |
Place of Origin: | China |
MOQ: | 1 |
Price: | Negotiable |
Payment Terms: | T/T, Western Union, |
Supply Ability: | 1000pcs per month |
Delivery Time: | 3-5 working days after received the payment |
Packaging Details: | Packed in original tray firstly ,then carton, at last Bubble bag for outer packing |
Function: | Step-Up, Step-Down |
Output Configuration: | Positive or Negative |
Topology: | Buck, Boost |
Output Type: | Adjustable |
Number of Outputs: | 1 |
Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Applications
Power Management Modules (PMIC): Widely used in motherboards, servers, network communication equipment, and portable electronics as load switches, power path management, and switching transistors in DC-DC synchronous buck/boost converters. Its integrated design significantly saves PCB space.
Motor Drive and Control: Ideal for driving small to medium-power DC motors, such as in robotics, automated equipment, and precision instruments, where it enables compact H-bridge or half-bridge circuits for motor direction and speed control.
Battery-Powered Devices: Used in smartphones, tablets, TWS earphone charging cases, portable medical devices, and more for battery protection circuits, charge/discharge management, and load switching. Its logic-level gate threshold (1.8V drive) and low on-resistance make it highly suitable for low-voltage, high-efficiency applications.
Signal Switching & Multiplexing: Applicable for routing analog or digital signals in test equipment, audio interfaces, or data acquisition systems.
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
INFORMATION
Category | ||
Mfr | ||
Series | ||
Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
Part Status | Obsolete | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 12 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 11.5A, 4.5V | |
Vgs(th) (Max) @ Id | 900mV @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 3529 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SO | |
Package / Case | ||
Base Product Number |
Drawing
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