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GaSb

Categories Indium Phosphide Wafer
Brand Name: zmkj
Model Number: GaP wafer
Place of Origin: CHINA
MOQ: 5pcs
Price: by case
Supply Ability: 1000pcs/month
Delivery Time: 1-4weeks
Packaging Details: single wafer case
Materials: GaP single crystal
industry: semiconductor substrates,device,optical
color: yellow
diameter: 0.5~76.5mm
surface: polished/lapped
thickness: 0.1-2mm
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GaSb

2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP wafer


ZMKJ can provides high quality single crystal GaP wafer ( Gallium phosphide ) to electronic and optoelectronic industry in diameter up to 2 inch . Gallium phosphide ( GaP ) crystal is an orange-yellow semi-translucent material formed by two elements , Gallium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method . GaP wafer is an important semiconductor material which have unique electrical properties as other III-V compound materials and is widely used as red , yellow , and green LED ( light-emitting diodes ) . We have as-cut single crystal GaP wafer for your LPE application , and also provide epi ready grade GaP wafer for your MOCVD & MBE epitaxial application . Please contact us for more product information .


Electrical and Doping Specification


Product Name:Gallium phosphide (GaP) crystal substrate

Technical parameters:


Crystal structureCubic a = 5.4505 Å
Growth methodCzochralski method
Density4.13 g / cm 3
Mp1480 o C 1
Thermal expansion coefficient5.3 x10 -6 / O C
DopantS-doped undoped
Direction<111> or <100> <100> or <111>
TypeN N
Thermal Conductivity2 ~ 8 x10 17 / cm 3 4 ~ 6 x10 16 / cm 3
Resistivity W.cm0.03 to 0.3
EPD (cm -2)<3x10 5 <3x10 5
Specifications:

Crystallographic directions: <111>, <100> ± 0.5 o

Standard polished Size: Ø2 "* 0.35mm; Ø2" * 0.43mm. Ø3"x0.3mm

Note: according to customer requirements with special dimensions and orientation substrates
StandardPacking1000 clean room, 100 clean bag or single box packaging

Dopant availableS / Zn / Cr / Undoped
Type of conductivityN / P ,Semi-conducting / Semi-insulating
Concentration1E17 - 2E18 cm-3
Mobility> 100 cm2 / v.s.

Product Specification

GrowthLEC
DiameterØ 2"
Thickness400 um
Orientation<100> / <111> / <110> or others
Off orientationOff 2° to 10°
SurfaceOne side polished or two sides polished
Flat optionsEJ or SEMI. Std .
TTV<= 10 um
EPD<= 2E5 cm-2
GradeEpi polished grade / mechanical grade
PackageSingle wafer container

Sample pictures


FAQ:

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 10-20pcs up.


we also can provide other materials semiconductor wafer as like below

Product Tags:

mgo substrate

  

gap wafer

  
China GaSb factory
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