Categories | UV Photodiode Sensor |
---|---|
Brand Name: | Hamamatsu |
Model Number: | S12060-10 |
Place of Origin: | Japan |
MOQ: | Standard |
Supply Ability: | 3000/pcs/month |
Delivery Time: | 3-5Workingdays |
Packaging Details: | Standard |
Price: | Negotiable |
Type: | Near infrared type |
Photosensitive area: | φ1 mm |
Package: | Metal |
Package category: | TO-18 |
Peak sensitivity wavelength (typical): | 800 nm |
Spectral response range: | 400 to 1000 nm |
S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient
This is an 800nm band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).
Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise
Sensitivity (typical) | 0.5 A/W |
Dark current (maximum) | 2 nA |
Cut-off frequency (typical) | 600 MHz |
Terminal capacitance (typical) | 6 pF |
Breakdown voltage (typical) | 200 V |
Breakdown voltage temperature coefficient (typical) | 0.4 V/°C |
Gain (typical) | 100 |
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