-
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well more
Brand Name:IRF
Model Number:IRF7329
Place of Origin:Thailand
-
...SiC) power module. Very low stray inductance, Outstanding performance at high frequency operation. Specification Of MSCSM120SKM11CT3AG Part Number MSCSM120SKM11CT3AG Product: Power MOSFET Modules Type: Buck Chopper Technology: SiC Vf - Forward Voltage: 1.5
...SiC) power module. Very low stray inductance, Outstanding performance at high frequency operation. Specification Of MSCSM120SKM11CT3AG Part Number MSCSM120SKM11CT3AG Product: Power MOSFET Modules Type: Buck Chopper Technology: SiC Vf - Forward Voltage: 1.5 more
Brand Name:Original Factory
Model Number:MSCSM120SKM11CT3AG
Place of Origin:CN
-
...Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...
...Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power... more
Brand Name:IXYS
Model Number:VMK165-007T
Place of Origin:America
-
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well more
Brand Name:IRF
Model Number:IRF7329
Place of Origin:Thailand
-
... delivery. Built with silicon-on-insulator (SOI) technology, it is ideal for applications such as motor control, digital power, switching power supplies, and solar cell inverters. It offers low gate charge, low on-resistance, high frequency operation, and
... delivery. Built with silicon-on-insulator (SOI) technology, it is ideal for applications such as motor control, digital power, switching power supplies, and solar cell inverters. It offers low gate charge, low on-resistance, high frequency operation, and more
Brand Name:Infineon Technologies
Model Number:BSC0901NSATMA1
Place of Origin:Multi-origin
-
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V Power...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V Power... more
Brand Name:Original
Model Number:IXFN39N90
Place of Origin:US
-
FM50DY-10 Module Electronic Components IC MCU Microcontroller Integrated Circuits FM50DY-10 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border...
FM50DY-10 Module Electronic Components IC MCU Microcontroller Integrated Circuits FM50DY-10 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border... more
Brand Name:KAIGENG
Model Number:FM50DY-10
Place of Origin:Guangdong, China
-
... buck power stage module, integrating two asymmetrical MOSFETs and a driver for optimal synchronous buck configuration. It features individually optimized MOSFETs for low capacitance, fast switching, and minimal conduction loss. The module is housed in ...
... buck power stage module, integrating two asymmetrical MOSFETs and a driver for optimal synchronous buck configuration. It features individually optimized MOSFETs for low capacitance, fast switching, and minimal conduction loss. The module is housed in ... more
Model Number:AOZ5239QI
Description:PowerVFQFN-31 Power Driver Modules RoHS
Mfr. Part #:AOZ5239QI
-
...Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET High Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module...
...Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET High Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module... more
Brand Name:ONSEMI
Model Number:FDMA1032CZ
Place of Origin:China
-
... gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most
... gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most more
Brand Name:Mersen
Model Number:NH1GG69V250P
Place of Origin:China
-
...Power Supply Module Product Description: LC SX1308 booster module carrying SX1308 chip, its packagnig is small, and high efficiency. The output power can be adjust, maximum can arrive 28V and its interior integrate the lowest RDS internal resistance 100mΩ metal oxide semiconductor field effect transistor (mosfet...
...Power Supply Module Product Description: LC SX1308 booster module carrying SX1308 chip, its packagnig is small, and high efficiency. The output power can be adjust, maximum can arrive 28V and its interior integrate the lowest RDS internal resistance 100mΩ metal oxide semiconductor field effect transistor (mosfet... more
Brand Name:Creatall
Model Number:DC-DC SX1308
Place of Origin:Guangdong, China
-
...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module...
...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module... more
Brand Name:original
Model Number:M68702H
Place of Origin:Original Manufacturer
-
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power more
Brand Name:HT
Model Number:F4N65L TO-220F-3L
Place of Origin:China
-
FQA40N25 Chipscomponent Electronic Components IC Chips FQA40N25 High Power MOSFET electronic chip brand new original TO-3P MOSFET 250V N-Channel QFET Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series FQA40N25 Reference Type Series ...
FQA40N25 Chipscomponent Electronic Components IC Chips FQA40N25 High Power MOSFET electronic chip brand new original TO-3P MOSFET 250V N-Channel QFET Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series FQA40N25 Reference Type Series ... more
Brand Name:ON
Model Number:FQA40N25
Place of Origin:original
-
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ... more
Brand Name:IXYS
Model Number:IXFK27N80Q
Place of Origin:Original Factory
-
...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...
...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs... more
Brand Name:IOR
Model Number:IRFZ44NPBF
Place of Origin:CHINA
-
...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power
...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power more
Brand Name:STMicroelectronics
Model Number:STP100N8F6
Place of Origin:Shenzhen, China
-
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. more
Brand Name:Hua Xuan Yang
Model Number:2N60
Place of Origin:ShenZhen China
-
...Power Amplifier Module 10A Working Current 55dBm Gain Product Description: This Power Amplifier Module is a 100W Blocking Power Amplifier Module designed for High Power RF Jamming. It has a module size of 200×90×24mm and a working frequency range of 20MHz~2700MHz. With a maximum working current of 10A and a gain of 55dBm, this module can provide an output power of up to 50dBm. Features: Product Name: Power Amplifier Module Module...
...Power Amplifier Module 10A Working Current 55dBm Gain Product Description: This Power Amplifier Module is a 100W Blocking Power Amplifier Module designed for High Power RF Jamming. It has a module size of 200×90×24mm and a working frequency range of 20MHz~2700MHz. With a maximum working current of 10A and a gain of 55dBm, this module can provide an output power of up to 50dBm. Features: Product Name: Power Amplifier Module Module... more
Brand Name:EST
Model Number:100W-850MHz
Place of Origin:CHINA
-
...-63Hz OTHER SUPERIOR PRODUCTS Yasakawa Motor, Driver SG- Mitsubishi Motor HC-,HA- Westinghouse Modules 1C-,5X- Emerson VE-,KJ- Honeywell TC-,TK- GE Modules IC - ABB Module AB Module 1756-,1759- Tourch Screen 2711- Mitsubishi Drive MR- ,
...-63Hz OTHER SUPERIOR PRODUCTS Yasakawa Motor, Driver SG- Mitsubishi Motor HC-,HA- Westinghouse Modules 1C-,5X- Emerson VE-,KJ- Honeywell TC-,TK- GE Modules IC - ABB Module AB Module 1756-,1759- Tourch Screen 2711- Mitsubishi Drive MR- , more
Brand Name:Honeywell
Model Number:620-0036
Place of Origin:USA
