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  • China NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors factory
    ...PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. Features •Exceptional Safe Operating Area •NPN/PNP... more
    Brand Name:ONSEMI
    Model Number:NJW0302G
    Place of Origin:Japan

    NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China Complementary 15A 250V 150W PNP Power Bipolar Transistors NJW0302G factory
    ...PNP Power Bipolar Transistors 15A 250V 150W NJW0281G 250V 15A 150W hfe75-150 and NJW0302G 250V 15A 150W hfe75-150 are pair. 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors... more
    Brand Name:ON
    Model Number:NJW0302G
    Place of Origin:USA

    Complementary 15A 250V 150W PNP Power Bipolar Transistors NJW0302G

    DELI ELECTRONICS TECHNOLOGY CO.,LTD
    [Guangdong,China]
  • China NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors factory
    ...PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. Features •Exceptional Safe Operating Area •NPN/PNP... more
    Brand Name:ONSEMI
    Model Number:NJW0302G
    Place of Origin:Japan

    NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors

  • China RF Power Transistors MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS factory
    Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ... more
    Brand Name:MOT
    Model Number:MRF15060S
    Place of Origin:PHILIPPINE

    RF Power Transistors MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS

  • China Brand New IC Parts 70W 50Mhz 12.5V UHF Mobile RF Power Bipolar Transistor NPN 18V M113 0St Sd1446 factory
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    Brand Name:original
    Place of Origin:Guangdong, China
    Manufacturer Part Number:sd1446

    Brand New IC Parts 70W 50Mhz 12.5V UHF Mobile RF Power Bipolar Transistor NPN 18V M113 0St Sd1446

  • China ZTX951STZ Bipolar Transistor IC BJT PNP Big Chip SELine factory
    ...: Through Hole Package / Case: TO-92-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 60 V Collector- Base Voltage VCBO: 100 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 4 A Pd - Power Dissipation: 1 more
    Brand Name:Diodes Incorporated
    Model Number:ZTX951STZ
    Place of Origin:USA

    ZTX951STZ Bipolar Transistor IC BJT PNP Big Chip SELine

    Wisdtech Technology Co.,Limited
    [Guangdong,China]
  • China MMBT2907ALT1G PNP Bipolar Transistor 60V VCEO, 600mA Continuous Current 310mW Power Dissipation SOT-23 Package Low Saturation Voltage High Current Gain For General-Purpose Amplification and Switching factory
    ...andamp; Switching andnbsp; Features 1:Transistor Type: PNP Bipolar (BJT) 2:Voltage Rating: 60V Vandlt;subandgt;CEOandlt;/subandgt; 3:Current Rating: 600mA Continuous Iandlt;subandgt;Candlt;/subandgt; 4:Power Rating: 310mW Total Power Dissipation 5:Package: more
    Brand Name:ON Semiconductor
    Model Number:MMBT2907ALT1G
    Place of Origin:China

    MMBT2907ALT1G PNP Bipolar Transistor 60V VCEO, 600mA Continuous Current 310mW Power Dissipation SOT-23 Package Low Saturation Voltage High Current Gain For General-Purpose Amplification and Switching

  • China 2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor factory
    ...Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor... more
    Brand Name:Toshiba
    Model Number:2SC5200
    Place of Origin:Original

    2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor

    Shenzhen Retechip Electronics Co., Ltd
    [Guangdong,China]
  • China JAN2N2907A PNP Bipolar Transistor factory
    JAN2N2907A BJTs Bipolar Transistors PNP Single Through Hole original Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package/Case: TO-18-3 Transistor Polarity: PNP Configuration: Single ... more
    Brand Name:original
    Model Number:JAN2N2907A
    Place of Origin:original

    JAN2N2907A PNP Bipolar Transistor

  • China MJ2955 Transistor MJ2955 Bipolar Transistor PNP 60V 15A 115W TO-3 factory
    Bipolar (BJT) Transistor 2N3055 MJ2955 Silicon Power Transistor Product Detail Packaging Tray Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V Power... more
    Brand Name:Original
    Model Number:MJ2955
    Place of Origin:US

    MJ2955 Transistor MJ2955 Bipolar Transistor PNP 60V 15A 115W TO-3

  • China MBT3906DW1T1G Bipolar Transistors - BJT SS GP XSTR PNP 40V factory
    Bipolar Transistors - BJT SS GP XSTR PNP 40V Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-363-6 Transistor Polarity: PNP ... more
    Brand Name:onsemi
    Model Number:MBT3906DW1T1G
    Minimum Order Quantity:3000

    MBT3906DW1T1G Bipolar Transistors - BJT SS GP XSTR PNP 40V

  • China Stable Charging Pile Ultra Fast IGBT , Industrial Insulated Gate Bipolar Transistor factory
    ... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its more
    Brand Name:REASUNOS
    Place of Origin:Guangdong, CN
    Price:Confirm price based on product

    Stable Charging Pile Ultra Fast IGBT , Industrial Insulated Gate Bipolar Transistor

  • China BCP53-16T1G Bipolar Transistors BJT Onsemi SOT-223-4 Cut Tape factory
    ...Bipolar Transistors - BJT RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-4 Transistor Polarity: PNP Configuration: Single Maximum DC Collector Current: 1.5 A Collector- Emitter Voltage VCEO Max: 80 V Collector- Base Voltage VCBO: 100 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 500 mV Pd - Power... more
    Brand Name:ON
    Model Number:BCP53-16T1G
    Price:0.1u

    BCP53-16T1G Bipolar Transistors BJT Onsemi SOT-223-4 Cut Tape

  • China NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor factory
    ...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power... more
    Brand Name:original
    Model Number:TIP41C
    Place of Origin:China

    NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor

    Shenzhen Res Electronics Limited
    [Guangdong,China]
  • China Aviation Parts 2N2907A Bipolar Transistors Collector- Emitter Voltage 60 V factory
    Aviation Parts 2N2907A Bipolar Transistors Collector- Emitter Voltage 60 V Descriptions of Aviation Parts: The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They... more
    Model Number:2N2907A
    Minimum Order Quantity:1 pcs
    Price:Negotiable

    Aviation Parts 2N2907A Bipolar Transistors Collector- Emitter Voltage 60 V

    XIXIAN FORWARD TECHNOLOGY LTD
    [Shaanxi,China]
  • China MMBT5401 PNP Epitaxial Silicon Transistor 2L SOT-23 3000 Pcs factory
    ...PNP Epitaxial Silicon Transistor MMBT5401 2L SOT-23 3000 pcs BJT PNP Transistor MMBT5401PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage -150Volts Power 300mWatts MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 2L FEATURES *PNP... more
    Brand Name:Original
    Model Number:MMBT5401
    Minimum Order Quantity:10 pcs

    MMBT5401 PNP Epitaxial Silicon Transistor 2L SOT-23 3000 Pcs

  • China Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 factory
    Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING... more
    Brand Name:Huixin
    Model Number:MMBT3906 SOT-23
    Place of Origin:China

    Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23

  • China NPN 80V 1A 130MHz 1.5W Bipolar Transistor BCP56-16T1G Surface Mount SOT-223 factory
    ...Bipolar Transistor NPN 80V 1A 130MHz 1.5W Surface Mount SOT-223 Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to order the 13 inch/4000 unit reel • PNP more
    Brand Name:ON
    Model Number:BCP56-16T1G
    Place of Origin:CHINA

    NPN 80V 1A 130MHz 1.5W Bipolar Transistor BCP56-16T1G Surface Mount SOT-223

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
  • China ZXTP19100CGTA PNP Diodes Incorporated Bipolar Transistors For Motor Drive factory
    ZXTP19100CGTA Diodes Incorporated Bipolar Transistors 1. Features BVCEO > -100V BVECO > -7V IC = -2AHigh Continuous Current Low Saturation VoltageVCE(sat) < -130mV @ -1ARCE(sat) =100mΩ Complementary NPNType:ZXTN19100CG Lead-Free Finish; RoHS Compliant (... more
    Brand Name:Diodes Incorporated
    Model Number:ZXTP19100CGTA
    Place of Origin:GERMANY

    ZXTP19100CGTA PNP Diodes Incorporated Bipolar Transistors For Motor Drive

  • China PB Free NPN PNP Transistor TPS62141RGTR Power LDMOS Transistor factory
    ...PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power... more
    Brand Name:Texas Instruments
    Model Number:TPS62141RGTR
    Place of Origin:N/S

    PB Free NPN PNP Transistor TPS62141RGTR Power LDMOS Transistor

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