• China 2Gbit NAND Flash Chip TSOPI-48 2.7V-3.6V 25ns Write Cycle IMS2G083ZZC1S-WP factory
    ... : 2048blocks PAGE READ / PROGRAM TIME Random Read Time(tR) : 30us(Max) Sequential access time :3.3v - 25ns(Min) Page program : 300us(Typ) more
    Brand Name:ICMAX
    Model Number:IMS2G083ZZC1S-WP
    Place of Origin:CN

    2Gbit NAND Flash Chip TSOPI-48 2.7V-3.6V 25ns Write Cycle IMS2G083ZZC1S-WP

  • China Integrated Circuit Chip MT29F2G08ABBGAH4-AAT:G 63-VFBGA NAND Flash Memory Chips factory
    ...Chip MT29F2G08ABBGAH4-AAT:G 63-VFBGA NAND Flash Memory Chips​ Product Description Of MT29F2G08ABBGAH4-AAT:G MT29F2G08ABBGAH4-AAT:G is 2Gbit Parallel Asynchronous NAND Flash Memory Chips. Specification Of MT29F2G08ABBGAH4-AAT:G Part Number MT29F2G08ABBGAH4-AAT:G Chipset Validation N/A Density 2Gb FBGA Code NX014 Op. Temp. -40C to +105C Features Of MT29F2G08ABBGAH4-AAT:G Memory Interface: Parallel Access Time: 30 ns Write Cycle more
    Brand Name:Original Factory
    Model Number:MT29F2G08ABBGAH4-AAT:G
    Place of Origin:CN

    Integrated Circuit Chip MT29F2G08ABBGAH4-AAT:G 63-VFBGA NAND Flash Memory Chips

  • China K9K8G08U0D-SCB0 SLC NAND Flash Memory Chips Parallel 3.3V 8G-BIT 1G X 8 25NS 48 PIN TSOP-I factory
    ... electronic components with wide range of application. It uses flash memory IC chips for programming and feature digital to analog converter and analog multiplexer IC chips for data exchange. It supports a wide range of voltage, including 3.3V, 5V and more
    Brand Name:OEM/ODM
    Model Number:K9K8G08U0D-SCB0
    Place of Origin:China

    K9K8G08U0D-SCB0 SLC NAND Flash Memory Chips Parallel 3.3V 8G-BIT 1G X 8 25NS 48 PIN TSOP-I

  • China MX25L3235EZNI-10G Memory Flash Chip High Speed And Reliable Storage factory
    ...applications that require large amounts of non-volatile memory. The chip features a 10nm process technology with a maximum read speed of 166MHz and a write speed of 66MHz. It also has a maximum capacity of 32Gb and an endurance rating of 200K cycles. The more
    Brand Name:Macronix
    Model Number:MX25L3235EZNI-10G
    Place of Origin:Multi-origin

    MX25L3235EZNI-10G Memory Flash Chip High Speed And Reliable Storage

  • China SM662PEF BESS Flash Memory IC Nand Flash TLC EMMC 100-BGA factory
    ... - NAND (TLC) Memory Size - Memory Interface eMMC Write Cycle Time - Word, Page - Voltage - Supply - Operating Temperature - Mounting Type Surface Mount Package / Case 100-LBGA ... more
    Brand Name:Silicon Motion, Inc.
    Model Number:SM662PEF BESS
    Place of Origin:Taiwan

    SM662PEF BESS Flash Memory IC Nand Flash TLC EMMC 100-BGA

  • China MX29GL512FHT2I-10Q  Write Cycle Time - Word, Page 100ns Access Time  100 ns Voltage - Supply 2.7V ~ 3.6V factory
    MX29GL512FHT2I Product Status Not For New Designs Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mb (64M x 8) Memory Interface Parallel Write Cycle Time - Word, Page 100ns Access Time 100 ns Voltage - Supply 2.7V ~ 3.6V ... more
    Model Number:MX29GL512FHT2I
    Place of Origin:Malaysia
    Certification:Standard Certification

    MX29GL512FHT2I-10Q Write Cycle Time - Word, Page 100ns Access Time 100 ns Voltage - Supply 2.7V ~ 3.6V

  • China SST39VF6401B-70-4C-EKE NOR Flash Chip 64 Mbit TSOP-48 factory
    SST39VF6401B-70-4C-EKE Memory ICs NOR Flash SMD/SMT TSOP-48 • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • Low Power ... more
    Brand Name:original
    Model Number:SST39VF6401B-70-4C-EKE
    Place of Origin:original

    SST39VF6401B-70-4C-EKE NOR Flash Chip 64 Mbit TSOP-48

  • China FWIXP425BB MCU Microcontrollers IC Chips Integrated Circuit factory
    ...Chip IC Components TH58BVG2S3HTAI0 Find information here in stock.xlsx Product Attributes TYPE DESCRIPTION Category Integrated Circuits (ICs) Memory Memory Mfr Kioxia America, Inc. Series Benand™ Package Tray Product Status Active Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 4Gbit Memory Organization 512M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 25ns... more
    Brand Name:Kioxia America, Inc.
    Model Number:TH58BVG2S3HTAI0
    Certification:ROHS

    FWIXP425BB MCU Microcontrollers IC Chips Integrated Circuit

  • China TH58NVG3S0HTAI0B4A FLASH - NAND (SLC) Memory IC 8Gbit Parallel 25 ns 48-TSOP I factory
    ...FLASH - NAND (SLC) Memory IC 8Gbit Parallel 25 ns 48-TSOP I Category Integrated Circuits (ICs) Memory Memory Mfr Kioxia America, Inc. Series - Part Status Active DigiKey Programmable Verified Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 8Gbit Memory Organization 1G x 8 Memory Interface Parallel Write Cycle Time - Word, Page 25ns... more
    Description:T495X477M010AT4860 470 µF Molded Tantalum Capacitors 10 V 2917 7343 Metric
    Stock:500PCS
    Minimum Order Quantity:1PCS

    TH58NVG3S0HTAI0B4A FLASH - NAND (SLC) Memory IC 8Gbit Parallel 25 ns 48-TSOP I

  • China THGBMHG6C1LBAU6 IC FLASH 8GBIT EMMC 153WFBGA Kioxia America, Inc. factory
    ... IC Chips Mfr Kioxia America Inc. Series e•MMC™ Package Tray Product-Status Obsolete Memory-Type Non-Volatile Memory-Format FLASH Technology FLASH - NAND (MLC) Memory-Size 8Gb (1G x 8) Memory-Interface eMMC Clock-Frequency 200 MHz Write-Cycle-Time-... more
    Brand Name:Kioxia America, Inc.
    Model Number:THGBMHG6C1LBAU6
    Minimum Order Quantity:1

    THGBMHG6C1LBAU6 IC FLASH 8GBIT EMMC 153WFBGA Kioxia America, Inc.

  • China THGBMHT0C8LBAIG  FLASH - NAND (MLC) Memory IC 128Gb (16G x 8) eMMC factory
    ...FLASH - NAND (MLC) Memory IC 128Gb (16G x 8) eMMC Product Attributes TYPE DESCRIPTION SELECT ALL Categories Integrated Circuits (ICs) Memory Manufacturer Kioxia America, Inc. Series e•MMC™ Packaging Tray Part Status Obsolete Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (MLC) Memory Size 128Gb (16G x 8) Memory Interface eMMC Clock Frequency 200MHz Write Cycle... more
    Brand Name:KIOXIA
    Model Number:THGBMHT0C8LBAIG THGAMRT0T43BAIR THGJFCT0T44BAIL THGJFCT0T44BAKL THGAF8T0T43BAIR THGAFBT0T43BAB8 THGAFET0T43BAB8 THGAF4T0N8LBAIR
    Place of Origin:TAIWAN

    THGBMHT0C8LBAIG FLASH - NAND (MLC) Memory IC 128Gb (16G x 8) eMMC

    ICOMPONENTS CO.,LIMITED
    [Guangdong,China]
  • China AT28C256-15PU Integrated Circuit Chip 256K (32K x 8) Paged Parallel EEPROM factory
    AT28C256-15PU Intergreated Chip 256K (32K x 8) Paged Parallel EEPROM Features Fast Read Access Time – 150 ns Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle ... more
    Model Number:AT28C256-15PU
    Place of Origin:original factory

    AT28C256-15PU Integrated Circuit Chip 256K (32K x 8) Paged Parallel EEPROM

  • China MTFC4GLWDM-4M 2.7V-3.6V eMMc 4GB 70MB/s read speed 7.5MB/s write speed memory chip factory
    2.7V-3.6V eMMc 4GB 70MB/s read speed 7.5MB/s write speed memory chip MTFC4GLWDM-4M MTFC4GLWDM-4M AAT Z, MTFC4GLWDM-4M AAT A Features • MultiMediaCard (MMC) controller and NAND Flash •Packages (RoHS compliant, "green package") – 153-ball TFBGA • VCC... more
    Brand Name:Micron
    Model Number:MTFC4GLWDM-4M AAT
    Place of Origin:Original

    MTFC4GLWDM-4M 2.7V-3.6V eMMc 4GB 70MB/s read speed 7.5MB/s write speed memory chip

  • China MT29F1G16ABBDAM68A3WC1 Memory IC Chip factory
    MT29F1G16ABBDAM68A3WC1 Specifications Part Status Obsolete Memory Format FLASH Memory Type FLASH - NAND Memory Size 1G (64M x 16) Speed 25ns Interface Parallel Voltage - Supply 1.7 V ~ 1.95 V Operating Temperature 0°C ~ 70°C (TA) Package / Case - Supplier ... more
    Place of Origin:Original
    Part Number:MT29F1G16ABBDAM68A3WC1
    Manufacturer:Micron Technology Inc.

    MT29F1G16ABBDAM68A3WC1 Memory IC Chip

  • China MX25L6406EM2I-12G  New Original Electronic Components Integrated Circuits Ic Chip With Best Price factory
    ... Tube Product Status Not For New Designs Digi-Key Programmable Verified Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 64Mbit Memory Organization 8M x 8 Memory Interface SPI Clock Frequency 86 MHz Write Cycle Time - more
    Brand Name:Macronix
    Model Number:MX25L6406EM2I-12G
    Place of Origin:China

    MX25L6406EM2I-12G New Original Electronic Components Integrated Circuits Ic Chip With Best Price

  • China Memory 512Mb Integrated Circuit Chip 100ns MX29GL512FHT2I 10Q factory
    MX29GL512FHT2I-10Q WRITE CYCLE TIME - WORD, PAGE 100NS ACCESS TIME 100 NS VOLTAGE - SUPPLY 2.7V ~ 3.6V MX29GL512FHT2I Product Status Not For New Designs Memory Type Non-Volatile Technology FLASH - NOR Memory Interface Parallel Write Cycle Time - Word, Page... more
    Brand Name:new origina
    Model Number:MX29GL512FHT2I
    Place of Origin:Original Factory

    Memory 512Mb Integrated Circuit Chip 100ns MX29GL512FHT2I 10Q

  • China 8 SOIC Integrated Circuit IC Chip , Flash Memory IC 1Mb SPI 33MHz SST25VF010A-33-4C-SAE factory
    SST25VF010A-33-4C-SAE FLASH Memory IC 1Mb (128K x 8) SPI 33MHz 8-SOIC Memory Type Non-Volatile Memory Format FLASH Technology FLASH Memory Size 1Mb (128K x 8) Clock Frequency 33MHz Write Cycle Time - Word, Page 20µs Memory Interface SPI Voltage - Supply 2.... more
    Brand Name:Microchip Technology
    Model Number:SST25VF010A-33-4C-SAE
    Place of Origin:CHINA

    8 SOIC Integrated Circuit IC Chip , Flash Memory IC 1Mb SPI 33MHz SST25VF010A-33-4C-SAE

  • China faspeed K7 240GB 3D NAND SATA 2.5 Inch Internal SSD factory
    Faspeed UXC 8GB USB 3.0 Flash Drive With Rotated Design For Data Storage Interface Type USB 2.0 USB 3.0 Flash Chip Grade A Flash Chip Transfer Rate Read:8-15MB/S, Write:4-10MB/S Warranty 12 months from you take them Samples available Small size with big ... more
    Brand Name:faspeed
    Model Number:UXC
    Place of Origin:China

    faspeed K7 240GB 3D NAND SATA 2.5 Inch Internal SSD

  • China 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory AM29F040-120EC factory
    DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with single- power-supply Flash — Superior inadvertent write protection... more
    Brand Name:anterwell
    Model Number:AM29F040-120EC
    Place of Origin:original factory

    4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory AM29F040-120EC

    Anterwell Technology Ltd.
    [Guangdong,China]
Tell “nand flash chip 25ns write cycle” Suppliers Your Requirement
*E-mail:
* Message:
Characters Remaining: (0/3000)
Inquiry Cart 0