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  • China MMBT3904-7-F multi emitter transistor NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR factory
    MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ... more
    Brand Name:Anterwell
    Model Number:MMBT3904-7-F
    Place of Origin:original factory

    MMBT3904-7-F multi emitter transistor NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China MMBT3904-7-F multi emitter transistor NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR factory
    MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ... more
    Model Number:MMBT3904-7-F
    Place of Origin:original factory

    MMBT3904-7-F multi emitter transistor NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

  • China MJ11033G Aviation Parts Darlington Emitter Transistors 5V factory
    Aviation Parts MJ11033G Darlington Transistors Emitter- Base Voltage 5 V Descriptions of Aviation Parts: High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features... more
    Model Number:MJ11033G
    Price:Negotiable
    Payment Terms:L/C, T/T

    MJ11033G Aviation Parts Darlington Emitter Transistors 5V

    XIXIAN FORWARD TECHNOLOGY LTD
    [Shaanxi,China]
  • China Multi-emitter 808nm Diode Laser Module 15W Fiber Coupled Laser Module factory
    Features: wavelength 808nm output power 15W 375µm fiber bundle diameter 0.22N.A. Applications: Laser pumping Illumination Medical use Material processing Specifications(25℃) Symbol Unit K808F02MN-15.00W Minimum Typical Maximum Parameter CW-Output Power Po... more
    Brand Name:BWT
    Model Number:K808F02MN-15.00W
    Place of Origin:China

    Multi-emitter 808nm Diode Laser Module 15W Fiber Coupled Laser Module

    BWT Beijing Ltd.
    [Beijing]
  • China JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors factory
    ...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... more
    Brand Name:Microchip / Microsemi
    Model Number:JAN2N2222A
    Place of Origin:ORIGINAL

    JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors

    Wisdtech Technology Co.,Limited
    [Guangdong,China]
  • China 600V 60A 378W Solar Inverter IGBT Power Transistor FGH60N60SFDTU factory
    ...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A more
    Brand Name:ON
    Model Number:FGH60N60SFDTU
    Place of Origin:Original

    600V 60A 378W Solar Inverter IGBT Power Transistor FGH60N60SFDTU

    Shenzhen Retechip Electronics Co., Ltd
    [Guangdong,China]
  • China A94 Silicon Power Transistor Emitter Base Voltage -5V For Mobile Power Supply factory
    ...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter... more
    Brand Name:Hua Xuan Yang
    Model Number:A94
    Place of Origin:ShenZhen China

    A94 Silicon Power Transistor Emitter Base Voltage -5V For Mobile Power Supply

  • China a1941 c5198 Transistor a1941 c5198 Transistor c5198 Amplifier 2SC5198 PNP Transistor 2SA1941 2SC5198 10A 100W TO-3P Original New factory
    ...- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Continuous Collector Current: ... more
    Brand Name:Original
    Model Number:2SA1941 2SC5198
    Place of Origin:US

    a1941 c5198 Transistor a1941 c5198 Transistor c5198 Amplifier 2SC5198 PNP Transistor 2SA1941 2SC5198 10A 100W TO-3P Original New

  • China 2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor factory
    ...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE VCBO Collector-base voltage Open emitter 140V VCEO Collector-emitter... more
    Brand Name:NEC
    Model Number:2SC2987
    Place of Origin:JAPAN

    2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor

    DELI ELECTRONICS TECHNOLOGY CO.,LTD
    [Guangdong,China]
  • China 600mA Silicon Power Transistor NPN Power Transistor High Current factory
    ...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter... more
    Brand Name:OTOMO
    Model Number:A42
    Place of Origin:ShenZhen China

    600mA Silicon Power Transistor NPN Power Transistor High Current

  • China 2N3439 Bipolar Junction Transistor IC Chip Through Hole TO393 factory
    ...Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter... more
    Brand Name:original
    Model Number:2N3439
    Place of Origin:original

    2N3439 Bipolar Junction Transistor IC Chip Through Hole TO393

  • China Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 factory
    ...Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter... more
    Brand Name:Huixin
    Model Number:MMBT3906 SOT-23
    Place of Origin:China

    Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23

  • China 2SB1424 ROHM UTC ICS Simbol Transistor Bipolar BJT ROHS 2SB1424 PNP Low VCE factory
    ...Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 20 V Collector- Base Voltage VCBO: 30 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... more
    Brand Name:ROHM Semiconductor
    Model Number:2SB1424
    Place of Origin:JAPAN

    2SB1424 ROHM UTC ICS Simbol Transistor Bipolar BJT ROHS 2SB1424 PNP Low VCE

  • China BUF420AW Bipolar BJT NPN Diode Transistor 450 V 30 A 200 W Through Hole TO-247-3 factory
    ...LOT SPREAD FOR RELIABLE OPERATION ●LOW BASE-DRIVE REQUIREMENTS Description: The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with more
    Brand Name:ST
    Model Number:BUF420AW
    Place of Origin:Malaysia

    BUF420AW Bipolar BJT NPN Diode Transistor 450 V 30 A 200 W Through Hole TO-247-3

  • China KTD1047 NPN IGBT Transistor Complementary To KTB817 For 60w High Power Amplifier factory
    KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 12 A ... more
    Brand Name:KEC
    Model Number:KTD1047
    Place of Origin:Korean

    KTD1047 NPN IGBT Transistor Complementary To KTB817 For 60w High Power Amplifier

  • China NPN PNP Transistors MJD45H11 Fairchild TO-252 New and Original in stock factory
    ...Transistors MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage ​ Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter... more
    Brand Name:Fairchild
    Model Number:MJD45H11
    Place of Origin:/

    NPN PNP Transistors MJD45H11 Fairchild TO-252 New and Original in stock

  • China RGBA / RGBW Multi Color High Power LED Diode , Purple LED Doide Emitter factory
    RGBA / RGBW Multi Color High Power LED Diode , Purple LED Doide Emitter Multi Color RGB Purple High Power LED Diode Products’ Features: High Power Emitter LED RGBA/RGBW for stage lighting High light efficacy, low light decay By using original advanced ... more
    Brand Name:TYANSHINE
    Model Number:TX-BRWG2A140-001
    Place of Origin:CN

    RGBA / RGBW Multi Color High Power LED Diode , Purple LED Doide Emitter

  • China BC848C CJ Transistor Gp Bjt Npn 30V 0.1A 250mW 3-Pin SOT-23 T/R factory
    BC848C CJ Trans GP BJT NPN 30V 0.1A 250mW 3-Pin SOT-23 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Type NPN Product Category Bipolar Small Signal Configuration Single Number of Elements... more
    Brand Name:CJ
    Model Number:BC848C
    Place of Origin:CHINA

    BC848C CJ Transistor Gp Bjt Npn 30V 0.1A 250mW 3-Pin SOT-23 T/R

  • China BC846B-7-F Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23 factory
    ...Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23 Product Attribute Attribute Value Select Attribute Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 65 V Collector- Base Voltage VCBO: 80 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... more
    Brand Name:Diodes Incorporated
    Model Number:BC846B-7-F
    Minimum Order Quantity:3000

    BC846B-7-F Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23

  • China Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor factory
    ...Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar inverters Trench and field-stop technology • Low collector to emitter... more
    Brand Name:Lingxun
    Model Number:LGT40N65HB
    Place of Origin:China

    Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor

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