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...Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver 7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Features . Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power...
...Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver 7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Features . Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power... more
Brand Name:Pe
Model Number:7MBR75UB120-50
Place of Origin:Japan
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...Mosfet Power Module thyristor diode Smart Power Module Features • UL Certified No.E209204(SPM27-EA package) • Very low thermal resistance due to using DBC • 600V-30A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power...
...Mosfet Power Module thyristor diode Smart Power Module Features • UL Certified No.E209204(SPM27-EA package) • Very low thermal resistance due to using DBC • 600V-30A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power... more
Model Number:FSBB30CH60F
Place of Origin:original factory
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...-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carbide (SiC) Mosfet Array module. Specification...
...-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carbide (SiC) Mosfet Array module. Specification... more
Brand Name:Original Factory
Model Number:MSCSM170HM23CT3AG
Place of Origin:CN
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... Loss Low Forward Voltage High Surge Current Capability Low Inductance Package Applications Inversion Welder Uninterruptible Power Supply (UPS) Plating Power Supply Ultrasonic Cleaner and
... Loss Low Forward Voltage High Surge Current Capability Low Inductance Package Applications Inversion Welder Uninterruptible Power Supply (UPS) Plating Power Supply Ultrasonic Cleaner and more
Brand Name:MACMIC
Model Number:MMF200ZB040DK1
Place of Origin:China
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...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V FET Feature - Power...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V FET Feature - Power... more
Brand Name:IXYS
Model Number:IXFN48N50
Place of Origin:CN
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Product Description: Our Ceramic Substrates are engineered to meet the highest standards of quality and performance, making them an ideal choice for a wide range of industrial applications. As essential components in electronic and electrical devices...
Product Description: Our Ceramic Substrates are engineered to meet the highest standards of quality and performance, making them an ideal choice for a wide range of industrial applications. As essential components in electronic and electrical devices... more
Brand Name: Yuxing
Place of Origin:china
Applications:Power Electronics, LED Substrates, Automotive Electronics, RF Modules
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...: Integrated power module: The IRSM505-055DA is an all-in-one power module that combines power MOSFETs, gate drivers, and protection circuitry into a single package. High voltage rating: With a maximum voltage rating of 55V, this module is suitable for ...
...: Integrated power module: The IRSM505-055DA is an all-in-one power module that combines power MOSFETs, gate drivers, and protection circuitry into a single package. High voltage rating: With a maximum voltage rating of 55V, this module is suitable for ... more
Brand Name:Infineon Technologies
Model Number:IRSM505-055DA
Place of Origin:Multi-origin
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... Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel ...
... Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel ... more
Brand Name:Infineon Technologies
Model Number:IPB044N15N5ATMA1
Place of Origin:Germany
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...Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...
...Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power... more
Brand Name:IXYS
Model Number:VMK165-007T
Place of Origin:America
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...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n more
Brand Name:Hua Xuan Yang
Model Number:G080NH03LA1C1
Place of Origin:ShenZhen China
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...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n more
Brand Name:Hua Xuan Yang
Model Number:G080NH03LA1C1
Place of Origin:ShenZhen China
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... years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a
... years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a more
Categories:High Power MOSFET
Country/Region:china
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...Power Module Transistors IGBTs Single IRG4BC30UDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 92A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A Power...
...Power Module Transistors IGBTs Single IRG4BC30UDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 92A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A Power... more
Brand Name:Infineon Technologies
Model Number:IRG4BC30UDPBF
Place of Origin:Original
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...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... more
Brand Name:Infineon
Model Number:IRF5210PBF
Place of Origin:Original Factory
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Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines...
Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines... more
Brand Name:Original brand
Model Number:STL26N60DM6
Place of Origin:Original
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Toshiba IGBT Power Module MG25Q6ES51 MG25Q6ES51 Product Description Brand: Toshiba Model: MG25Q6ES51 Category: Insulated Gate (MOSFET) Channel Type: N channel Conduction: enhanced Uses: A / wide band amplification Package outline: CER-DIP / ceramic line ...
Toshiba IGBT Power Module MG25Q6ES51 MG25Q6ES51 Product Description Brand: Toshiba Model: MG25Q6ES51 Category: Insulated Gate (MOSFET) Channel Type: N channel Conduction: enhanced Uses: A / wide band amplification Package outline: CER-DIP / ceramic line ... more
Brand Name:Toshiba
Model Number:MG25Q6ES51
Place of Origin:Japan
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...Power Module Transformer SMPS For Dish-Washing Machine12tv Power Module Key: hlk20M12 20W AC to DC power module transformer dcdc power module step down power module hilink 12v 20w power module 20w power module supply12v power module 220v to 12v power module for led light 12v 1660ma power module 12v dc power module isolated power module Description: 20W Series of Ultra-compact Power Module...
...Power Module Transformer SMPS For Dish-Washing Machine12tv Power Module Key: hlk20M12 20W AC to DC power module transformer dcdc power module step down power module hilink 12v 20w power module 20w power module supply12v power module 220v to 12v power module for led light 12v 1660ma power module 12v dc power module isolated power module Description: 20W Series of Ultra-compact Power Module... more
Brand Name:Hilink or OEM
Model Number:HLK20m12
Place of Origin:China
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...Power Module - TrenchStop® Series The IGBT Power Module, part of the TrenchStop® series, is a high-performance and reliable device designed for use in various industrial and automotive applications. It is a DC DC converter module that provides efficient and stable power conversion, making it an ideal choice for EV charging modules. Maximum Clock Frequency: 32 MHz The IGBT Power Module...
...Power Module - TrenchStop® Series The IGBT Power Module, part of the TrenchStop® series, is a high-performance and reliable device designed for use in various industrial and automotive applications. It is a DC DC converter module that provides efficient and stable power conversion, making it an ideal choice for EV charging modules. Maximum Clock Frequency: 32 MHz The IGBT Power Module... more
Brand Name:infineon
Model Number:FF450R12KT4
Place of Origin:china
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...module communication power module Product Description: 1.The efficiency is as high as 93%. 2.Power factor 0.998; 3.Input grid frequency: 45 ~ 65Hz; 4.Working temperature range: -40 ~ +65 C; 5.Rated output power: 5800W, power density as high as 0.813 W/cm3; 6.Safety regulations: EN60950: 1992, UL1950; 7.EMC: EN55022 Class B; 8.Hot swap non destructive; 9.Rectifier module...
...module communication power module Product Description: 1.The efficiency is as high as 93%. 2.Power factor 0.998; 3.Input grid frequency: 45 ~ 65Hz; 4.Working temperature range: -40 ~ +65 C; 5.Rated output power: 5800W, power density as high as 0.813 W/cm3; 6.Safety regulations: EN60950: 1992, UL1950; 7.EMC: EN55022 Class B; 8.Hot swap non destructive; 9.Rectifier module... more
Brand Name:Emerson
Model Number:R48-3500e
Place of Origin:CHINA
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... RDS internal resistance 100mΩ metal oxide semiconductor field effect transistor (mosfet), which can realize large current output of up to 2A. It widely used in 3G network products, digital products, mobile power supply,battery power supply, equipment,
... RDS internal resistance 100mΩ metal oxide semiconductor field effect transistor (mosfet), which can realize large current output of up to 2A. It widely used in 3G network products, digital products, mobile power supply,battery power supply, equipment, more
Brand Name:YUN TUDIO
Model Number:sx1308
Place of Origin:Guangdong, China
