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  • China High Current PNP Medium Power Low Saturation Transistor DIODES ZX5T951GQTC Designed for Automotive factory
    ...medium power, low saturation bipolar junction transistor (BJT) designed to meet the stringent requirements of automotive applications. It offers high continuous collector current, peak pulse current, and low saturation voltage, making it suitable for various power switching and driving applications.Product Attributes Brand: Diodes Incorporated Product Type: PNP Medium Power Low Saturation Transistor more
    Model Number:ZX5T951GQTC
    Current - Collector Cutoff:20nA
    Pd - Power Dissipation:3W

    High Current PNP Medium Power Low Saturation Transistor DIODES ZX5T951GQTC Designed for Automotive

  • China ZTX958STZ PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR high voltage power mosfet factory
    ZTX958STZ PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR high voltage power mosfet FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model ... more
    Brand Name:ZETEX
    Model Number:ZTX958STZ
    Place of Origin:Original

    ZTX958STZ PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR high voltage power mosfet

  • China FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors factory
    FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. ​Specification Of FS300R17OE4B81BPSA1 Part Number ... more
    Brand Name:Original Factory
    Model Number:FS300R17OE4B81BPSA1
    Place of Origin:CN

    FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors

  • China 600 V 3 Pin Transistor Socket BCR20KM-12L Medium Power Insulated Type factory
    600 V 3 Pin Transistor Socket BCR20KM-12L Medium Power Insulated Type Transistor BCR20KM-12L Medium Power Use Features • IT (RMS) : 20 A • VDRM : 600 V • IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5 • Viso : ... more
    Brand Name:RENESAS
    Model Number:BCR20KM-12L
    Place of Origin:Malaysia

    600 V 3 Pin Transistor Socket BCR20KM-12L Medium Power Insulated Type

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China MJE340G Medium Power 0.5A 300V 20W NPN Silicon Transistor factory
    ...Medium-Power NPN Silicon Transistor 0.5A Power Transistor 300V 20W Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • These Devices are Pb−Free and are RoHS Compliant* • Complementary to MJE350 • 0.5 AMPERE • Power Transistor... more
    Brand Name:ON
    Model Number:MJE340G
    Place of Origin:USA

    MJE340G Medium Power 0.5A 300V 20W NPN Silicon Transistor

    DELI ELECTRONICS TECHNOLOGY CO.,LTD
    [Guangdong,China]
  • China NE5520379A-T1 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET MOTOROLA RF Power Transistors factory
    NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency ... more
    Brand Name:MOTOROLA
    Model Number:NE5520379A-T1
    Place of Origin:MALAYSIA

    NE5520379A-T1 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET MOTOROLA RF Power Transistors

  • China M221 Schneider Plc Module TM221C24U With 24V DC Power Supply 10 Transistors factory
    ... High-Performance Compact PLC:The TM221C24U is a high-performance compact programmable controller from the Modicon M221 series, ideal for small to medium-sized automation systems more
    Brand Name:Schneider
    Model Number:TM221C24U
    Minimum Order Quantity:1

    M221 Schneider Plc Module TM221C24U With 24V DC Power Supply 10 Transistors

    Boxun (Hong Kong) Technology Limited
    [Hongkong,China]
  • China Thermal Resistance N Channel Mosfet Switch , Medium Power Transistor factory
    AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device... more
    Brand Name:Hua Xuan Yang
    Model Number:AOD418
    Place of Origin:ShenZhen China

    Thermal Resistance N Channel Mosfet Switch , Medium Power Transistor

  • China 2SD882 TO-252 NPN medium power triode transistor chip bipolar junction transistor BJT brand new and original factory
    #detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px... more
    Brand Name:Original
    Model Number:2SD882
    Place of Origin:Original

    2SD882 TO-252 NPN medium power triode transistor chip bipolar junction transistor BJT brand new and original

  • China HMC442LC3BTR RF Power Transistor - Great For High Speed Applications factory
    ... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ... more
    Brand Name:Analog Devices Inc.
    Model Number:HMC442LC3BTR
    Place of Origin:Multi-origin

    HMC442LC3BTR RF Power Transistor - Great For High Speed Applications

  • China NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T factory
    ...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power... more
    Model Number:PBSS4160T,215
    Place of Origin:CN

    NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
  • China BCX56-16 Bipolar (BJT) Transistor NPN 80V 1A 130MHz 500 mW Surface Mount SOT-89 factory
    ... or amplification needs? Look no further than the BCX56-16 NPN silicon AF transistors. These transistors are complementary to the BCX53-16 PNP transistor and are used in AF driver and output stages, making them perfect for a variety of applications. Not more
    Brand Name:Original
    Model Number:BCX56-16
    Place of Origin:Guangdong, China

    BCX56-16 Bipolar (BJT) Transistor NPN 80V 1A 130MHz 500 mW Surface Mount SOT-89

  • China Transistor Medium Frequency Melting Furnace Energy Saving Advantage factory
    ... is composed of a set of serial-connection resonant dual output power cabinet and two smelting furnaces. Output power can randomly be distributed in stepless form between the two furnace bodies, and the two furnace can be powered simultaneously, one is more
    Brand Name:Huarui
    Model Number:0.5 tons ~ 10 tons
    Place of Origin:China

    Transistor Medium Frequency Melting Furnace Energy Saving Advantage

  • China 400W 2.0 Channels Power Amplifier Board with Toshiba Transistor for Audio Enhancement factory
    ...) Circuit design: A970/C2240 high voltage audio pair dual differential circuit Voltage amplification: A1145/C2705 Medium power pair: more
    Brand Name:creatall
    Model Number:CA-1004
    Place of Origin:China

    400W 2.0 Channels Power Amplifier Board with Toshiba Transistor for Audio Enhancement

  • China PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor factory
    ...Transistor Discrete Semiconductors PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power... more
    Brand Name:Nexperia USA Inc
    Model Number:PBHV8540X,115
    Minimum Order Quantity:1 piece

    PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor

    Guangzhou Topfast Technology Co., Ltd.
    [Guangdong,China]
  • China PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors factory
    ...Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power... more
    Brand Name:Nexperia USA Inc.
    Model Number:PBHV8540X,115
    Place of Origin:CHINA

    PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

    Angel Technology Electronics Co
    [Hongkong,China]
  • China BCX54-10-QX 45V PNP Transistor 1A Collector Current Low VCE(sat) 250mV TO-243AA Package High Current Gain (hFE 100-630) AEC-Q101 Qualified for Automotive Applications factory
    ...;NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits andbull; High collector current capability IC and ICM andbull; Three current gain selections andbull; High power dissipation ... more
    Brand Name:Nexperia
    Model Number:BCX54-10-QX
    Place of Origin:China

    BCX54-10-QX 45V PNP Transistor 1A Collector Current Low VCE(sat) 250mV TO-243AA Package High Current Gain (hFE 100-630) AEC-Q101 Qualified for Automotive Applications

  • China SOT223 Bipolar Electronic Passive Components Transistor BCP56-16T1G TRANS NPN 80V 1A factory
    .... The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. PRODUCT PROPERTIES Product Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 80 V more
    Brand Name:onsemi
    Model Number:BCP56-16T1G
    Place of Origin:China

    SOT223 Bipolar Electronic Passive Components Transistor BCP56-16T1G TRANS NPN 80V 1A

  • China Original HFP50N06 NPN PNP Transistor Normal Temperature For Power Supply factory
    NPN PNP Transistor SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD HFP50N06 ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 41 pct. Popularity Medium Win Source Part Number 1180287-HFP50N06 ... more
    Brand Name:SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
    Model Number:HFP50N06
    Place of Origin:N/S

    Original HFP50N06 NPN PNP Transistor Normal Temperature For Power Supply

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