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... N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switching, power supplies, DC-DC converters, and
... N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switching, power supplies, DC-DC converters, and more
Brand Name:Infineon Technologies
Model Number:BSC070N10NS5
Place of Origin:original
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...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ...
...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ... more
Brand Name:Infineon / IR
Model Number:IRLML5203TRPBF
Place of Origin:CHIAN
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Low Gate Voltage MOSFET with Reliable and High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {...
Low Gate Voltage MOSFET with Reliable and High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Price:Confirm price based on product
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...Channel Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS(on), low gate charge and low gate resistance. It ’s up to 30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered circuits. N Channel
...Channel Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS(on), low gate charge and low gate resistance. It ’s up to 30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered circuits. N Channel more
Brand Name:Hua Xuan Yang
Model Number:AP5N10SI
Place of Origin:ShenZhen China
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...MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 1.75 mOhms Vgs - Gate-Source Voltage...
...MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 1.75 mOhms Vgs - Gate-Source Voltage... more
Brand Name:STMicroelectronics
Model Number:STL150N3LLH5
Place of Origin:CHN
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS... more
Brand Name:OTOMO
Model Number:8H02ETS
Place of Origin:ShenZhen China
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... S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use...
... S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use... more
Brand Name:CJ
Model Number:CJ2310 S10
Place of Origin:CHINA
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...channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate...
...channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate... more
Brand Name:STMicroelectronics
Model Number:STW25N80K5
Place of Origin:Original Factory
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...Channel 30V 25A 2.5W 50W Surface Mount TO-252 General Description The AOD417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistanceof the DPAK package, this device is well suited forhigh current load applications. FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage...
...Channel 30V 25A 2.5W 50W Surface Mount TO-252 General Description The AOD417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistanceof the DPAK package, this device is well suited forhigh current load applications. FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage... more
Brand Name:Alpha & Omega Semiconductor Inc.
Model Number:AOD417
Place of Origin:CHINA
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... low gate and output charge, combined with very low on-state resistance and small package size, make OptiMOS™ 25V the best choice for demanding server, datacom and communication voltage regulator solutions. Specification Of BSZ036NE2LSATMA1 Part Number:
... low gate and output charge, combined with very low on-state resistance and small package size, make OptiMOS™ 25V the best choice for demanding server, datacom and communication voltage regulator solutions. Specification Of BSZ036NE2LSATMA1 Part Number: more
Brand Name:Original Factory
Model Number:BSZ036NE2LSATMA1
Place of Origin:CN
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... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on
... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on more
Brand Name:Ti
Model Number:FDPF045N10A
Minimum Order Quantity:Contact us
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...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. more
Brand Name:FAIRCHILD
Model Number:SSS7N60B
Place of Origin:Original
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...channel MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low...
...channel MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low... more
Brand Name:Microchip
Model Number:Onsemi
Certification:RoHS Compliant
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...MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalanche tested andbull; Low input capacitance and gate charge andbull; Low gate input resistance andnbsp; Applications andbull; Switching applications andnbsp; Description These devices are N-channel Power MOSFETs...
...MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalanche tested andbull; Low input capacitance and gate charge andbull; Low gate input resistance andnbsp; Applications andbull; Switching applications andnbsp; Description These devices are N-channel Power MOSFETs... more
Brand Name:STMicroelectronics
Model Number:STF28NM50N
Place of Origin:China
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... Channel Type 3-Phase Number of Drivers 6 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10 V ~ 20 V Logic Voltage - VIL, VIH 0.8V, 2.2V Current - Peak Output (Source, Sink) 250mA, 500mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V ...
... Channel Type 3-Phase Number of Drivers 6 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10 V ~ 20 V Logic Voltage - VIL, VIH 0.8V, 2.2V Current - Peak Output (Source, Sink) 250mA, 500mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V ... more
Brand Name:Original
Model Number:IR2130STRPBF
Place of Origin:US
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... Style: SMD/SMT Package / Case: SC-88-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 295 mA Rds On - Drain-Source Resistance: 1.6 Ohms Vgs - Gate-Source Voltage:
... Style: SMD/SMT Package / Case: SC-88-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 295 mA Rds On - Drain-Source Resistance: 1.6 Ohms Vgs - Gate-Source Voltage: more
Brand Name:ON
Model Number:NTJD5121NT1G
Place of Origin:ON
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...MOSFET P-CH 100V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive Yes PPAP Unknown Product Category Small Signal Configuration Single Dual Drain Process Technology SIPMOS Channel Mode Enhancement Channel Type P Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 100 Maximum Gate Source Voltage (V) ±20 Maximum Gate
...MOSFET P-CH 100V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive Yes PPAP Unknown Product Category Small Signal Configuration Single Dual Drain Process Technology SIPMOS Channel Mode Enhancement Channel Type P Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 100 Maximum Gate Source Voltage (V) ±20 Maximum Gate more
Brand Name:Infineon
Model Number:BSP322PH6327XTSA1
Place of Origin:CHINA
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...devices. This advanced driver features three independent output channels, both high and low side referenced, ensuring optimal control. With built-in dead time and shoot-through protection, it safeguards the half-bridge, preventing any potential damage. The
...devices. This advanced driver features three independent output channels, both high and low side referenced, ensuring optimal control. With built-in dead time and shoot-through protection, it safeguards the half-bridge, preventing any potential damage. The more
Brand Name:JUYI
Model Number:JY213L
Place of Origin:China
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...MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts have been specially tailored to minimize The on-the-state resistance and to maintain low gate...
...MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts have been specially tailored to minimize The on-the-state resistance and to maintain low gate... more
Brand Name:ON
Model Number:FDMS6681Z
Place of Origin:America
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...resistance and high switching speed, making it very suitable for use in low voltage applications. Conclusion: IPD80R1K4P7 has the following characteristics: Very low switching and conduction losses; High voltage limit, capable of operating at high voltage;
...resistance and high switching speed, making it very suitable for use in low voltage applications. Conclusion: IPD80R1K4P7 has the following characteristics: Very low switching and conduction losses; High voltage limit, capable of operating at high voltage; more
Brand Name:INFINEON
Model Number:IPD80R1K4P7
Place of Origin:original
