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  • China J201 JFET N-Channel Transistor General Purpose high power rf transistors factory
    ...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage: - 1.5 V Drain-Source Current at Vgs=0: 80 mA Pd - Power... more
    Brand Name:InterFET
    Model Number:J201
    Place of Origin:USA

    J201 JFET N-Channel Transistor General Purpose high power rf transistors

    Wisdtech Technology Co.,Limited
    [Guangdong,China]
  • China AD9361BBCZ High Power Rf Transistor factory
    ...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High more
    Brand Name:Analog Devices Inc.
    Model Number:AD9361BBCZ
    Place of Origin:Multi-origin

    AD9361BBCZ High Power Rf Transistor

  • China FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance factory
    FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components... more
    Brand Name:Fuji Electric
    Model Number:FLM0910-25F
    Place of Origin:JP

    FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

    Shenzhen Koben Electronics Co., Ltd.
    [Guangdong,China]
  • China Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors factory
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    Brand Name:VBE
    Model Number:VBE36015E2
    Place of Origin:CHINA

    Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors

    VBE Technology Shenzhen Co., Ltd.
    [Guangdong,China]
  • China PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors factory
    ... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ... more
    Brand Name:MOTOROLA
    Model Number:PTFA18100
    Place of Origin:MALAYSIA

    PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors

  • China One Generation High Power RF Connectors SMA To IPEX RF Wire Connection factory
    ...tested and quality controlled prior to shipment Product Details: Product name: DALEE RF Connector Secification: Three generation Type : Female Certification: ISO9001,UL,ROHS and the latest REACH Voltage Rating: 60 VAC ... more
    Brand Name:DALEE
    Model Number:DL50011204
    Place of Origin:Guangdong,China(Mainland)

    One Generation High Power RF Connectors SMA To IPEX RF Wire Connection

    Dalee Electronic Co., Ltd.
    [Guangdong,China]
  • China 100W High Power RF Load IP65 Water Protection PIM 15DBC In 2G , 3G , 4G factory
    ...high power RF Load waterproof IP67 with PIM 150dBc 4.3-10 female connector used in 2G,3G,4G 1. 200w high power RF load , the PIM is 150-160dBc .With very good performance . 2. The VSWR is <1.2 3. Intermodulation is 150-160dBc@2X43dBm 4. IP 67 , outsider , good waterproof. 5. Frequency :0-3000G New features 1. Integrates 2 ~8 Wireless Bands 2. More than 50~100 dB Input Isolation 3. High Average Power... more
    Brand Name:LENOLINK
    Model Number:100W RF LOAD with 4.3-10 connector
    Place of Origin:CHINA

    100W High Power RF Load IP65 Water Protection PIM 15DBC In 2G , 3G , 4G

    Lenolink Telecommunication Co.,Ltd
    [Guangdong,China]
  • China MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors factory
    ... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • more
    Brand Name:Anterwell
    Model Number:MJD112T4G
    Place of Origin:original factory

    MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

    Anterwell Technology Ltd.
    [Guangdong,China]
  • China Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor factory
    Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor Description The RIG22 is a high-performance power resistor engineered for applications requiring precision, durability, and superior heat resistance. Manufactured by BOCHEN, the RIG22 features a robust ceramic core structure with flame-retardant coating, ensuring excellent thermal conductivity and mechanical stability under continuous load. With a power... more
    Brand Name:BOCHEN
    Model Number:RIG22
    Place of Origin:Chengdu

    Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor

  • China RIG High Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor factory
    ...High Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor Description: RIG high power resistance is also called RIG RF resistor, RF RF resistor, high frequency RF resistor, flange RF resistor, load RF resistor, RF resistor and high power microband resistors Product characteristics: 1.Small volume, large power capacity, good high-frequency characteristics, reliable performance, and convenient installation. 2.Suitable for power more
    Brand Name:BONENS
    Model Number:RIG Resistor
    Place of Origin:Sichuan, China

    RIG High Power RF Resistor 1000W 800W 500W 250W 100W Flange Resistor

  • China N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G factory
    N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are ... more
    Brand Name:ONSEMI
    Model Number:NDD04N60ZT4G
    Place of Origin:Original

    N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

  • China 1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB factory
    ...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High... more
    Brand Name:original
    Model Number:CLA50E1200HB
    Place of Origin:Original Factory

    1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB

  • China Charging Pile High Power IGBT Transistor Multipurpose For OBC factory
    ...High Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and a faster switching speed, High Power IGBT offers a reliable and efficient solution for these applications. High Power... more
    Brand Name:REASUNOS
    Place of Origin:Guangdong, CN
    Price:Confirm price based on product

    Charging Pile High Power IGBT Transistor Multipurpose For OBC

  • China High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement factory
    High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier provides exceptional power... more
    Brand Name:SWT
    Model Number:SW-PA-8002000-60C
    Place of Origin:China

    High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement

  • China 500Mhz-2400MHz High Power RF Amplifier Smaller Size LAN 28V DC factory
    500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA... more
    Brand Name:Kimpok Technology / OEM
    Model Number:KP-LAM800-50W
    Place of Origin:China

    500Mhz-2400MHz High Power RF Amplifier Smaller Size LAN 28V DC

  • China 500Mhz-2400MHz High Power RF Amplifier Smaller Size LAN 28V DC factory
    500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA... more
    Brand Name:Ding Shen
    Model Number:DS-LAM800-50W
    Place of Origin:China

    500Mhz-2400MHz High Power RF Amplifier Smaller Size LAN 28V DC

  • China High Power RF Jamming Module - Working Frequency 20MHz~6GHz Current ≤6.0A factory
    High Power RF Jamming Module - Working Frequency 20MHz~6GHz Current ≤6.0A Product Description: Our High Power RF Jamming Module is a powerful 50W Blocking Power Amplifier Module designed specifically for use in communication systems. It is capable of delivering an output power... more
    Brand Name:EST
    Model Number:NR50W-B42
    Place of Origin:CHINA

    High Power RF Jamming Module - Working Frequency 20MHz~6GHz Current ≤6.0A

  • China High Power Mos Transistor IC Chip FDPC5018SG Electronic Parts factory
    FDPC5018SG Electronic part MOS transformer Bom service Original high power mosfet transistor #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#... more
    Brand Name:ON
    Model Number:FDPC5018SG
    Place of Origin:America

    High Power Mos Transistor IC Chip FDPC5018SG Electronic Parts

    Shenzhen Res Electronics Limited
    [Guangdong,China]
  • China Double Sided High Frequency Pcb With RF Microwave For High Power RF Amplifier factory
    Double Sided High Frequency Pcb With RF Microwave For High Power RF Amplifier Quick Detail : Type Pcb Material Rogers Layer 2 Size 6*6cm Permittivity 2.2 Color Green Surface Finish Immersion Tin Parameter: Model Parameter thickness(mm) Permittivity(ER) F4B... more
    Brand Name:XCE
    Model Number:XCE BB50
    Place of Origin:China

    Double Sided High Frequency Pcb With RF Microwave For High Power RF Amplifier

    Shenzhen Xinchenger Electronic Co.,Ltd
    [Guangdong,China]
  • China High Power Rf Coaxial Connector 4.3-10 Mini Din Male for 1/2" super flexible cable factory
    High Power Rf Coaxial Connector 4.3-10 Mini Din Male for 1/2" super flexible cable Product Description Coaxial DIN 4.3-10 to 12 superflexible cable soldering type ZD RF Connector has an operational frequency range of DC-6 GHz, offers excellent VSWR ... more
    Brand Name:ZD
    Model Number:ZD-CN-MNDM-CF12S
    Place of Origin:CHINA

    High Power Rf Coaxial Connector 4.3-10 Mini Din Male for 1/2" super flexible cable

    SHENZHEN ZD TECH CO., LTD
    [Guangdong,China]
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