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...MOSFET Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface Mount PowerPAK 1212-8 Product Description: This IRLML5103TRPBF MOSFET is an N-channel enhancement mode power field-effect transistor in a PowerPAK 1212-8 package. It has a drain-source voltage rating of 20V, a gate-source voltage rating of ±20V, and a drain current...
...MOSFET Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface Mount PowerPAK 1212-8 Product Description: This IRLML5103TRPBF MOSFET is an N-channel enhancement mode power field-effect transistor in a PowerPAK 1212-8 package. It has a drain-source voltage rating of 20V, a gate-source voltage rating of ±20V, and a drain current... more
Brand Name:Infineon Technologies
Model Number:IRLML5103TRPBF
Place of Origin:original
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...MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs Features TrenchMOS™ technology Very fast switching Subminiature surface mount package. Applications Battery management High...
...MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs Features TrenchMOS™ technology Very fast switching Subminiature surface mount package. Applications Battery management High... more
Brand Name:NXP Semiconductors
Model Number:SI2304DS,215
Place of Origin:China
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High Power MOSFET BSS138L Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over ...
High Power MOSFET BSS138L Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over ... more
Brand Name:ONSEMI
Model Number:BSS138L
Place of Origin:China
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... EFFICIENCY SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power semiconductor devices.currently has
... EFFICIENCY SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and testing of power semiconductor devices.currently has more
Brand Name:Lingxun
Place of Origin:China
Certification:IATF16949,ISO9001,ISO14001,ROHS,REACH
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... Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Electrical Characteristics (T =25°C unless otherwise noted) A. The value of RθJA is measured with the
... Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Electrical Characteristics (T =25°C unless otherwise noted) A. The value of RθJA is measured with the more
Brand Name:Hua Xuan Yang
Model Number:HXY4266
Place of Origin:ShenZhen China
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...175C MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 25 A Avalanche Current IAR...
...175C MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 25 A Avalanche Current IAR... more
Brand Name:VISHAY
Model Number:SUD25N06-45L
Place of Origin:Original
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...Logic IC OR Gate IC 4 Channel integrated circuit ic Logic Type OR Gate Number of Circuits 4 Number of Inputs 2 Features - Voltage - Supply 4.5V ~ 5.5V Current - Quiescent (Max) 2µA Current - Output High, Low 4mA, 4mA Logic Level - Low 0.8V Logic Level - High...
...Logic IC OR Gate IC 4 Channel integrated circuit ic Logic Type OR Gate Number of Circuits 4 Number of Inputs 2 Features - Voltage - Supply 4.5V ~ 5.5V Current - Quiescent (Max) 2µA Current - Output High, Low 4mA, 4mA Logic Level - Low 0.8V Logic Level - High... more
Brand Name:Texas Instruments
Model Number:SN74HCT32DRG4
Place of Origin:CHINA
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...on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in high current load applications. FEATURES ● ‐40V/‐70A, RDS(ON) ≤10mΩ@VGS=‐10V ● High density cell design for
...on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in high current load applications. FEATURES ● ‐40V/‐70A, RDS(ON) ≤10mΩ@VGS=‐10V ● High density cell design for more
Brand Name:JUYI
Model Number:JY4P7M
Place of Origin:China
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... drawn from the power supply pins that can be used as a reference for power size planning. These currents vary greatly with the resources used. Product Attributes Of EP3C16Q240C8N Part Number EP3C16Q240C8N Number of Logic Elements: 15408 LE Number of I/Os:
... drawn from the power supply pins that can be used as a reference for power size planning. These currents vary greatly with the resources used. Product Attributes Of EP3C16Q240C8N Part Number EP3C16Q240C8N Number of Logic Elements: 15408 LE Number of I/Os: more
Brand Name:Original Factory
Model Number:EP3C16Q240C8N
Place of Origin:CN
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...Gate Drivers SMART POWER STAGE MODULE Features Supports PS4 Mode for IMVP-8 Ultra-Compact 5 mm x 5 mm PQFN Copper-Clip Package with Flip Chip Low-Side MOSFET High Current Handling: 50 A 3-State 5 V PWM Input Gate Driver Low Shutdown Current IVCC < 6 μA Diode Emulation for Enhanced Light Load Efficiency Fairchild PowerTrench® MOSFETs...
...Gate Drivers SMART POWER STAGE MODULE Features Supports PS4 Mode for IMVP-8 Ultra-Compact 5 mm x 5 mm PQFN Copper-Clip Package with Flip Chip Low-Side MOSFET High Current Handling: 50 A 3-State 5 V PWM Input Gate Driver Low Shutdown Current IVCC < 6 μA Diode Emulation for Enhanced Light Load Efficiency Fairchild PowerTrench® MOSFETs... more
Brand Name:Ti
Model Number:FDMF3035
Minimum Order Quantity:Contact us
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... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more
... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more more
Brand Name:JUYI
Model Number:JY4P7M
Place of Origin:China
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...Logic Output Optocouplers Gate Drive Coupler Toshiba TLP5222 Gate Driver Photocoupler Toshiba TLP5222 Gate Driver Photocoupler offers a highly integrated, multi-functional, 2.5A output current gate driver in a long creepage and clearance SO16L package. The TLP5222 includes functions of desaturation detection, isolated FAULT status feedback, soft gate...
...Logic Output Optocouplers Gate Drive Coupler Toshiba TLP5222 Gate Driver Photocoupler Toshiba TLP5222 Gate Driver Photocoupler offers a highly integrated, multi-functional, 2.5A output current gate driver in a long creepage and clearance SO16L package. The TLP5222 includes functions of desaturation detection, isolated FAULT status feedback, soft gate... more
Brand Name:Toshiba
Model Number:TLP5222(D4-TP,E
Minimum Order Quantity:50pcs
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Product Description: Introducing Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G...
Product Description: Introducing Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Price:Confirm price based on product
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IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (...
IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (... more
Brand Name:Infineon Technologies
Model Number:IPP65R110CFDA
Place of Origin:United States
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...MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE High power and current...
...MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE High power and current... more
Brand Name:CJ
Model Number:CJ2310 S10
Place of Origin:CHINA
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...-40persons/min (IC Card) 6. Power Consumption: 40W/24V 7. Input Interface: Dry contact signal, +12V electric level signal or impulse signal with width more than 100ms, drive current >=10mA 8.
...-40persons/min (IC Card) 6. Power Consumption: 40W/24V 7. Input Interface: Dry contact signal, +12V electric level signal or impulse signal with width more than 100ms, drive current >=10mA 8. more
Brand Name:Koten
Model Number:KT119
Place of Origin:China
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum ...
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum ... more
Brand Name:OTOMO
Model Number:HXY4812
Place of Origin:ShenZhen China
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General Description: The JY4P7M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for ...
General Description: The JY4P7M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for ... more
Brand Name:JEUNKEI
Model Number:JY4P7M
Place of Origin:China
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... - Supply 1V ~ 5.5V Current - Quiescent (Max) 40 µA Current - Output High, Low 12mA, 12mA Input Logic Level - Low 0.3V ~ 0.8V Input Logic Level - High 0.9V ~ 2V Max Propagation Delay @ V, Max CL 9ns @ 3.3V, 50pF Operating Temperature -40°C ~ 125°C
... - Supply 1V ~ 5.5V Current - Quiescent (Max) 40 µA Current - Output High, Low 12mA, 12mA Input Logic Level - Low 0.3V ~ 0.8V Input Logic Level - High 0.9V ~ 2V Max Propagation Delay @ V, Max CL 9ns @ 3.3V, 50pF Operating Temperature -40°C ~ 125°C more
Model Number:74LV08DB,118
Minimum Order Quantity:1
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... 30mOhm @ 12A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 20V Power - ...
... 30mOhm @ 12A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 20V Power - ... more
Brand Name:Original
Model Number:AOD609
Place of Origin:US
