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...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... more
Brand Name:Infineon
Model Number:IRF5210PBF
Place of Origin:Original Factory
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...power transistors for electric motorcycle 18 mosfets 35A controller 48-96v factory direct Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated voltage 48-96v Rated Power 800-2000w Color silver Mosfet 18 Model 18 mosfets...
...power transistors for electric motorcycle 18 mosfets 35A controller 48-96v factory direct Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated voltage 48-96v Rated Power 800-2000w Color silver Mosfet 18 Model 18 mosfets... more
Brand Name:SURINGMAX
Model Number:18 mosfets 35A
Place of Origin:CHINA
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)
... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) more
Brand Name:Infineon Technologies/International Rectifier IOR
Model Number:IRF1404ZPBF
Minimum Order Quantity:1 piece
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...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor
...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor more
Brand Name:Original
Model Number:IPG20N06S4L14AATMA1
Place of Origin:Original
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Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...
Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ... more
Brand Name:Motorola, Inc
Model Number:MRF136
Place of Origin:Taiwan
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Brand Name:VBE
Model Number:VBE36015E2
Place of Origin:CHINA
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IPD90N06S4-04 TO-252 60V 90A FET MOSFET Silk screen 4N0604 Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IPD90N06S4-04 is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic ...
IPD90N06S4-04 TO-252 60V 90A FET MOSFET Silk screen 4N0604 Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IPD90N06S4-04 is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic ... more
Brand Name:INFINEON
Model Number:IPD90N06S4-04
Place of Origin:China
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... Loss Low Forward Voltage High Surge Current Capability Low Inductance Package Applications Inversion Welder Uninterruptible Power Supply (UPS) Plating Power Supply Ultrasonic Cleaner and
... Loss Low Forward Voltage High Surge Current Capability Low Inductance Package Applications Inversion Welder Uninterruptible Power Supply (UPS) Plating Power Supply Ultrasonic Cleaner and more
Brand Name:MACMIC
Model Number:MMF200ZB040DK1
Place of Origin:China
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130kV ±60° Unilateral Tilt ≤7μm Focus MOSFET Power Semiconductor Xray AX9100 Unicomp Internal Void Detector The AX9100 Unicomp Internal Void Detector is a high-precision X-ray ...
130kV ±60° Unilateral Tilt ≤7μm Focus MOSFET Power Semiconductor Xray AX9100 Unicomp Internal Void Detector The AX9100 Unicomp Internal Void Detector is a high-precision X-ray ... more
Brand Name:UNICOMP
Model Number:AX9100
Place of Origin:China
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Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW...
Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW... more
Brand Name:in
Model Number:STAV58010P2
Place of Origin:CN
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NPN PNP Transistor Texas Instruments/TI BQ26100DRPR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 54 pct. Popularity High Is this a common-used part? Yes Win Source Part Number 011972-...
NPN PNP Transistor Texas Instruments/TI BQ26100DRPR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 54 pct. Popularity High Is this a common-used part? Yes Win Source Part Number 011972-... more
Brand Name:Texas Instruments
Model Number:BQ26100DRPR
Place of Origin:N/S
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Features: It is suitable for the forming of pipe-packaged power transistors, audions, and other electronic components of similar shape. *Its speed can be adjusted steplessly. It is easy to operate and maintain. Molds can be made upon the customer’s ...
Features: It is suitable for the forming of pipe-packaged power transistors, audions, and other electronic components of similar shape. *Its speed can be adjusted steplessly. It is easy to operate and maintain. Molds can be made upon the customer’s ... more
Brand Name:ML
Model Number:ML-309A
Place of Origin:China
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...MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency with outstanding ease-of-use 1 performance tradeoff Enabling increased power...
...MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency with outstanding ease-of-use 1 performance tradeoff Enabling increased power... more
Brand Name:Original Factory
Model Number:IPL60R225CFD7AUMA1
Place of Origin:China
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... -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE...
... -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE... more
Brand Name:UCHI
Model Number:3904W /3906W
Place of Origin:Dongguan China
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...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-Level Interface: TTL/CMOS 2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors...
...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-Level Interface: TTL/CMOS 2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors... more
Brand Name:Huixin
Model Number:BSS138
Place of Origin:China
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...-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Parameter Table: roduct Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS:
...-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Parameter Table: roduct Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: more
Brand Name:Infineon
Model Number:IPB018N10N5ATMA1
Place of Origin:USA
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power more
Brand Name:HT
Model Number:F4N65L TO-220F-3L
Place of Origin:China
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... AB 4 Way Powerful Car Subwoofers , 10 Inch Mosfet Slim Active Subwoofer 300W 10" slim subwoofer PWM MOSFET POWER SUPPLY CLASS A/B Technology 1 Channel High Performance Power Amplifier Active Subwoofer Slim Design for Under seat high power Full Aluminum...
... AB 4 Way Powerful Car Subwoofers , 10 Inch Mosfet Slim Active Subwoofer 300W 10" slim subwoofer PWM MOSFET POWER SUPPLY CLASS A/B Technology 1 Channel High Performance Power Amplifier Active Subwoofer Slim Design for Under seat high power Full Aluminum... more
Brand Name:XHR
Model Number:RF-C692D
Place of Origin:Shenzhen,China
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BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? ...
BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? ... more
Brand Name:Infineon Technologies
Model Number:BF999 E6327
Place of Origin:CHINA
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.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.
.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects. more
Brand Name:TeXin
Model Number:TX-50W
Place of Origin:Shenzhen China
