-
Dynamic Random Access Memory DRAM 2Gb F-die DDR3 SDRAM X16 K4B2G1646F-BCMA JEDEC standard 1.5v + 0.075V Power Supply VDoo = 1.5V + 0.075V 400 ...
Dynamic Random Access Memory DRAM 2Gb F-die DDR3 SDRAM X16 K4B2G1646F-BCMA JEDEC standard 1.5v + 0.075V Power Supply VDoo = 1.5V + 0.075V 400 ... more
Brand Name:SAMSUNG
Model Number:K4B2G1646F-BCMA
Place of Origin:KR
-
... memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM. Specification Of MT53E512M32D1ZW-046 WT:B Part Number: MT53E512M32D1ZW-046 WT:B Memory Format: DRAM Memory Size: 16Gbit Memory Interface: Parallel Write Cycle Time - Word,
... memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM. Specification Of MT53E512M32D1ZW-046 WT:B Part Number: MT53E512M32D1ZW-046 WT:B Memory Format: DRAM Memory Size: 16Gbit Memory Interface: Parallel Write Cycle Time - Word, more
Brand Name:Original Factory
Model Number:MT53E512M32D1ZW-046 WT:B
Place of Origin:CN
-
MT53D1024M32D4DT-053 AIT:D Micron DRAM LPDDR4 32G 1GX32 FBGA QDP VFBGA-200 MT53D1024M32D4DT-053 AIT:D TR MT53D1024M32D4DT-053 AAT:D MT53D1024M32D4DT-053 AAT:D TR Manufacturer: Micron Technology Product Type: Dynamic Random Access Memory Type: SDRAM Mobile...
MT53D1024M32D4DT-053 AIT:D Micron DRAM LPDDR4 32G 1GX32 FBGA QDP VFBGA-200 MT53D1024M32D4DT-053 AIT:D TR MT53D1024M32D4DT-053 AAT:D MT53D1024M32D4DT-053 AAT:D TR Manufacturer: Micron Technology Product Type: Dynamic Random Access Memory Type: SDRAM Mobile... more
Brand Name:Micron Technology
Model Number:MT53D1024M32D4DT-053 AIT:D
Place of Origin:USA
-
AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ...
AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ... more
Brand Name:Original
Model Number:AS4C32M16SC-7TIN
Place of Origin:Original
-
H9HCNNNBPUMLHR NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type...
H9HCNNNBPUMLHR NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type... more
Brand Name:SKHYNIX
Model Number:H9HCNNNBPUMLHR- NMO
Place of Origin:KOREA
-
MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the leading distributors of electronic products...
MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the leading distributors of electronic products... more
Brand Name:MICRON
Model Number:MT53D512M32D2DS-053 AIT:D
Place of Origin:Shenzhen,China
-
#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px...
#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px... more
Brand Name:original
Model Number:W9825G6KH-6
Place of Origin:original
-
...DYNAMIC RAM WITH EDO PAGE MODE Quick Detail: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE Description: The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access...
...DYNAMIC RAM WITH EDO PAGE MODE Quick Detail: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE Description: The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access... more
Brand Name:Integrated Silicon Solution, Inc
Model Number:IS41LV16100B-60KL
Place of Origin:PHILIPPINE
-
... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...
... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ... more
Brand Name:Micron Technology Inc.
Model Number:MT46V16M16P-5B:M
Place of Origin:original
-
...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ...
...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ... more
Brand Name:Hynix
Model Number:Hynix Memory IC
Place of Origin:South Korea, China
-
Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with ...
Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with ... more
Brand Name:Alliance Memory, Inc.
Model Number:AS4C2M32SA-6TCN
Minimum Order Quantity:1
-
...Access Control Tripod turnstile Turnstile Gate Functions and Features: 1. 304 stainless steel: Anti-rust, wear-resistant, high temperature resistant, and corrosion resistance 2. Molded Tripod Turnstile Mechanism: Die-cast aluminum integral molding, special paving treatment 3. Pedestrian passage gate main board: Dynamic arrow lights guide traffic, Dry contact signal, Support fire signal access, Memory...
...Access Control Tripod turnstile Turnstile Gate Functions and Features: 1. 304 stainless steel: Anti-rust, wear-resistant, high temperature resistant, and corrosion resistance 2. Molded Tripod Turnstile Mechanism: Die-cast aluminum integral molding, special paving treatment 3. Pedestrian passage gate main board: Dynamic arrow lights guide traffic, Dry contact signal, Support fire signal access, Memory... more
Brand Name:WEJOIN
Model Number:WJTS211
Place of Origin:Shenzhen, China
-
... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL):
... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL): more
Brand Name:MDTIC
Model Number:MT41J128M16HA-15E-D
Place of Origin:Original
-
... Memory (DRAM) is split between the operating system, an object store, and application memory. Additionally, a section of Non-volatile Random Access Flash Memory (NOVRAM), functioning as a virtual hard drive, is divided between the operating system and
... Memory (DRAM) is split between the operating system, an object store, and application memory. Additionally, a section of Non-volatile Random Access Flash Memory (NOVRAM), functioning as a virtual hard drive, is divided between the operating system and more
Brand Name:GE Fanuc
Model Number:IC752SPL014
Place of Origin:USA
-
... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL):
... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL): more
Brand Name:MDTIC
Model Number:MT41J128M16HA-15E-D
Place of Origin:Original
-
... – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the ...
... – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the ... more
Brand Name:MICRON
Model Number:MT48LC4M16A2TG
Place of Origin:Original
-
..., and corrosion resistance 2. Molded Tripod Turnstile Mechanism: Die-cast aluminum integral molding, special paving treatment 3. Pedestrian passage gate main board: Dynamic arrow lights guide traffic, Dry contact signal, Support fire signal access, Memory
..., and corrosion resistance 2. Molded Tripod Turnstile Mechanism: Die-cast aluminum integral molding, special paving treatment 3. Pedestrian passage gate main board: Dynamic arrow lights guide traffic, Dry contact signal, Support fire signal access, Memory more
Brand Name:Ironman
Model Number:IM.S101A
Place of Origin:China
