-
IRF840APBF MOSFET High-Performance Power Electronics for Enhanced Reliability and Efficiency FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive ...
IRF840APBF MOSFET High-Performance Power Electronics for Enhanced Reliability and Efficiency FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive ... more
Brand Name:Vishay Siliconix
Model Number:IRF840APBF
Place of Origin:original
-
ZXMP10A17E6TA 100V P-CHANNEL ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions...
-
... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is
-
FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...
FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage... more
Brand Name:FORTUNE
Model Number:FS8205A
Place of Origin:TAIWAN
FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
-
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other...
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other... more
Brand Name:Hua Xuan Yang
Model Number:10G03S
Place of Origin:ShenZhen China
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor
-
Drone Motor Esc 300V 300A Brushless Esc With Reverse Function for Air Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 40-300V 300A 225*180*50 1940g NO BEC Yes Yes ...
Drone Motor Esc 300V 300A Brushless Esc With Reverse Function for Air Basic information: Voltage Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 40-300V 300A 225*180*50 1940g NO BEC Yes Yes ... more
Brand Name:BigFlier
Model Number:F-300V-300A-A
Place of Origin:ShenZhen
Mosfet ESC Electronic Speed Controller Brushless 300V 300A Motor With Heat Sink
-
Product Description: With a frequency range of 50Hz-60Hz, this EMI Power Filter is ideal for use in a wide range of applications, from home appliances to industrial machinery. Its dielectric strength of 1500VAC for 1 minute ensures that it can withstand ...
-
...MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic...
...MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic... more
Brand Name:ONSEMI
Model Number:NVMS5P02
Place of Origin:China
High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ
-
...MOSFET BSS138K, 220 mA, Vds=50 V, 3-Pin SOT-23 Package Enhancement mode field effect transistors (FETs) are produced using Fairchild's patented high cell density DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. Fairchild offers a large portfolio of MOSFET
...MOSFET BSS138K, 220 mA, Vds=50 V, 3-Pin SOT-23 Package Enhancement mode field effect transistors (FETs) are produced using Fairchild's patented high cell density DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. Fairchild offers a large portfolio of MOSFET more
Brand Name:original
Model Number:BSS138K
Minimum Order Quantity:discussible
BSS138K Electronic IC Chips 220mA 50V 3 Pin SOT-23 Package
-
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best ...
-
...MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability...
...MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability... more
Brand Name:Texas Instruments
Model Number:PD85035S-E
Place of Origin:Malaysia
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
-
...Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable...
...Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable... more
Brand Name:JUYI
Model Number:JY4N8M
Place of Origin:China
High Side BLDC Motor Driver MOSFET Enhancement Mode Power For Power Switching
-
Electronic Components Trans MOSFET P-CH 30V 7.4A Automotive 8-Pin DSO T/R BSO200P03SHXUMA1 Integrated Circuits Technical Specifications : PCB changed 8 Package Width 4(Max) Package Height 1.65(Max) Package Length 5(Max) Lead Shape Gull-wing Mounting Surface Mount Product Category Power MOSFET Process Technology OptiMOS Configuration Single Quad Drain Triple Source Channel Mode Enhancement...
Electronic Components Trans MOSFET P-CH 30V 7.4A Automotive 8-Pin DSO T/R BSO200P03SHXUMA1 Integrated Circuits Technical Specifications : PCB changed 8 Package Width 4(Max) Package Height 1.65(Max) Package Length 5(Max) Lead Shape Gull-wing Mounting Surface Mount Product Category Power MOSFET Process Technology OptiMOS Configuration Single Quad Drain Triple Source Channel Mode Enhancement... more
Brand Name:Infineon
Model Number:BSO200P03SHXUMA1
Place of Origin:Shenzhen, China
Electronic Components Trans MOSFET P-CH 30V 7.4A Automotive 8-Pin DSO T/R BSO200P03SHXUMA1 Integrated Circuits
-
Product Introduction of Infineon IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-...
-
Basic Model Electronic Combination Lock – A High-Security Solution for Safes and Export Gun Cabinets This product is a basic model electronic combination lock that integrates an electronic password system with a mechanical bolt design, suitable for various types of safes and common export gun cabinets. With its robust structure and high-security performance, it is widely used in homes, offices, and firearm storage equipment, providing reliable
Basic Model Electronic Combination Lock – A High-Security Solution for Safes and Export Gun Cabinets This product is a basic model electronic combination lock that integrates an electronic password system with a mechanical bolt design, suitable for various types of safes and common export gun cabinets. With its robust structure and high-security performance, it is widely used in homes, offices, and firearm storage equipment, providing reliable more
Audible Feedback:Yes
Smartphone App Compatible:No
Number Of Keys:2
Basic Model Electronic Combination Lock – A High-Security Solution for Safes and Export Gun Cabinets
-
制造商: Toshiba 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: Through Hole 封装 / 箱体: TO-220-3 晶体管极性: N-Channel 通道数量: 1 Channel Vds-漏源极击穿电压: 900 V Id-连续漏极电流: 7 A Rds On-漏源导通电阻: 1.6 Ohms Vgs - 栅极-源极电压: - 30 V, + 30 V Vgs th-栅源极阈值电压: 4 V Qg-栅极电荷: 32 nC 最小工作温度: - 55 C ...
制造商: Toshiba 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: Through Hole 封装 / 箱体: TO-220-3 晶体管极性: N-Channel 通道数量: 1 Channel Vds-漏源极击穿电压: 900 V Id-连续漏极电流: 7 A Rds On-漏源导通电阻: 1.6 Ohms Vgs - 栅极-源极电压: - 30 V, + 30 V Vgs th-栅源极阈值电压: 4 V Qg-栅极电荷: 32 nC 最小工作温度: - 55 C ... more
Brand Name:TOSHIBA
Model Number:TK7A90E,S4X
Payment Terms:T/T
Toshiba TK7A90E N-Channel MOSFET 900V 7A TO-220-3
-
... and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more
-
...Electronic Component provider from China——GS Electronics, Product Description: The ADUM1250ARZ is a highly versatile and reliable digital isolator designed to provide enhanced safety and noise immunity for a wide range of applications. With its advanced features and robust design, this product offers superior performance and protection for sensitive electronic...
...Electronic Component provider from China——GS Electronics, Product Description: The ADUM1250ARZ is a highly versatile and reliable digital isolator designed to provide enhanced safety and noise immunity for a wide range of applications. With its advanced features and robust design, this product offers superior performance and protection for sensitive electronic... more
Description:ADUM1250ARZ
Stock:10000
Minimum Order Quantity:1
ADUM1250ARZ Mosfet Transistor Original New Stock Integrated Circuit IC Chips SOIC-8 ADUM1250ARZ
-
Specification Frequency 20 Hz to 2 MHz with 4-digit resolution over any frequency range; for a less expensive LCR meter with a 300 k/500 k/1 MHz frequency range, check out the E4980AL Precision LCR Meter! Basic Accuracy Excellent measurement repeatability...
-
... are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Simplified Operation A transistor can use a small signal applied between
... are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Simplified Operation A transistor can use a small signal applied between more
Brand Name:Upperbond
Model Number:Maker
Place of Origin:China
Baby Mark King Size Through Hole Version Mosfet Irfz44ns For Kretek Machines