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...EEPROM Memory IC 256Kb (32K X 8) Parallel 150 Ns 28-CPGA Mfr Microchip Technology Series - Product Status Active Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 256Kb (32K x 8) Memory Interface Parallel Write Cycle Time - Word, Page 10ms Access Time 150 ns...
...EEPROM Memory IC 256Kb (32K X 8) Parallel 150 Ns 28-CPGA Mfr Microchip Technology Series - Product Status Active Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 256Kb (32K x 8) Memory Interface Parallel Write Cycle Time - Word, Page 10ms Access Time 150 ns... more
Brand Name:Microchip Technology
Model Number:AT28C256-15UM/883-815
Place of Origin:USA
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... is organized as 32,768 words by 8 bits. Manufactured with Microchip’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less
... is organized as 32,768 words by 8 bits. Manufactured with Microchip’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less more
Brand Name:MICROCHIP
Model Number:AT28C256-15PU
Place of Origin:America
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FLASH Memory IC 256Kbit Parallel 150 Ns 28-TSOP AT29C256-15TI Sharp Electrionic Components PRODUCT DESCRIPTION Part number AT29C256-15TI is manufactured by Microchip Technology and distributed by Stjk. As one of the leading distributors of electronic ...
FLASH Memory IC 256Kbit Parallel 150 Ns 28-TSOP AT29C256-15TI Sharp Electrionic Components PRODUCT DESCRIPTION Part number AT29C256-15TI is manufactured by Microchip Technology and distributed by Stjk. As one of the leading distributors of electronic ... more
Brand Name:Microchip Technology
Model Number:AT29C256-15TI
Place of Origin:China
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Product Details 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm ...
Product Details 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm ... more
Brand Name:Infineon Technologies
Model Number:S29GL128P90TFIR10
Minimum Order Quantity:1
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...IC FLASH 1GBIT PARALLEL 64FBGA Category Integrated Circuits (ICs) Memory Memory Mfr Infineon Technologies Series GL-T Package Tray Product Status Active Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gbit Memory Organization 128M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 60ns Access Time 110 ns...
...IC FLASH 1GBIT PARALLEL 64FBGA Category Integrated Circuits (ICs) Memory Memory Mfr Infineon Technologies Series GL-T Package Tray Product Status Active Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gbit Memory Organization 128M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 60ns Access Time 110 ns... more
Brand Name:Infineon
Model Number:S29GL01GT11FHIV10
Minimum Order Quantity:100
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FLASH MEMORY IC CHIP CAT28C64BW-12T -----64K-BIT CMOS PARALLEL EEPROM NEW AND ORIGINAL INTEGRATED CIRCUIT IC CHIP Quick Detail: 64K-Bit CMOS PARALLEL EEPROM Specifications: Datasheets CAT28C64B Product Photos 28-SOIC Product Change Notification Product Obsolescence 30/Jun/2011 Standard Package 500 Category Integrated Circuits (ICs) Family Memory Series - Packaging Tape & Reel (TR) Format - Memory EEPROMs - Parallel Memory Type EEPROM Memory...
FLASH MEMORY IC CHIP CAT28C64BW-12T -----64K-BIT CMOS PARALLEL EEPROM NEW AND ORIGINAL INTEGRATED CIRCUIT IC CHIP Quick Detail: 64K-Bit CMOS PARALLEL EEPROM Specifications: Datasheets CAT28C64B Product Photos 28-SOIC Product Change Notification Product Obsolescence 30/Jun/2011 Standard Package 500 Category Integrated Circuits (ICs) Family Memory Series - Packaging Tape & Reel (TR) Format - Memory EEPROMs - Parallel Memory Type EEPROM Memory... more
Brand Name:original
Model Number:CAT28C64BW-12T
Place of Origin:Original Factory
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Quick Detail: 64K-Bit CMOS PARALLEL EEPROM Specifications: Datasheets CAT28C64B Product Photos 28-SOIC Product Change Notification Product Obsolescence 30/Jun/2011 Standard Package 500 Category Integrated Circuits (ICs) Family Memory Series - Packaging ...
Quick Detail: 64K-Bit CMOS PARALLEL EEPROM Specifications: Datasheets CAT28C64B Product Photos 28-SOIC Product Change Notification Product Obsolescence 30/Jun/2011 Standard Package 500 Category Integrated Circuits (ICs) Family Memory Series - Packaging ... more
Brand Name:ONS
Model Number:CAT28C64BW-12T
Certification:ROHS COMPLIANT
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...FLASH - NAND (SLC) Memory IC 8Gbit Parallel 25 ns 48-TSOP I Category Integrated Circuits (ICs) Memory Memory Mfr Kioxia America, Inc. Series - Part Status Active DigiKey Programmable Verified Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 8Gbit Memory Organization 1G x 8 Memory Interface Parallel Write Cycle Time - Word, Page 25ns Access Time 25 ns...
...FLASH - NAND (SLC) Memory IC 8Gbit Parallel 25 ns 48-TSOP I Category Integrated Circuits (ICs) Memory Memory Mfr Kioxia America, Inc. Series - Part Status Active DigiKey Programmable Verified Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 8Gbit Memory Organization 1G x 8 Memory Interface Parallel Write Cycle Time - Word, Page 25ns Access Time 25 ns... more
Description:T495X477M010AT4860 470 µF Molded Tantalum Capacitors 10 V 2917 7343 Metric
Stock:500PCS
Minimum Order Quantity:1PCS
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24LCS22AT-I/SN EEPROM Memory IC 2Kbit I²C 400 KHz 900 Ns 8-SOIC Features: • Single Supply with Operation down to 2.5V • Supports Enhanced EDID™ (E-EDID™) 1.3 • Completely Implements DDC1™/DDC2™ Interface for Monitor Identification, including Recovery to ...
24LCS22AT-I/SN EEPROM Memory IC 2Kbit I²C 400 KHz 900 Ns 8-SOIC Features: • Single Supply with Operation down to 2.5V • Supports Enhanced EDID™ (E-EDID™) 1.3 • Completely Implements DDC1™/DDC2™ Interface for Monitor Identification, including Recovery to ... more
Brand Name:Microchip Technology
Model Number:24LCS22AT-I/SN
Place of Origin:TAIWAN
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... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one
... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one more
Brand Name:Original Factory
Model Number:S29GL01GS10FHI010
Place of Origin:CN
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MT29F2G16ABAEAWP:E Memory ICs NAND Flash Micron Data Storage 128MX16 EEPROM Ic NAND Flash Memory Ic Chip Power Management ICs MICRON MT29F32G08CBADBWP Product Range FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP App Characteristics VDD = VDDQ = 1.35V (1.283...
MT29F2G16ABAEAWP:E Memory ICs NAND Flash Micron Data Storage 128MX16 EEPROM Ic NAND Flash Memory Ic Chip Power Management ICs MICRON MT29F32G08CBADBWP Product Range FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP App Characteristics VDD = VDDQ = 1.35V (1.283... more
Brand Name:MICRON
Model Number:MT29F2G16ABAEAWP:E
Minimum Order Quantity:Negotiable
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Product Listing: MT40A1G8SA-062E:R Flash Memory Chips Product Parameters: - Memory Type: Flash - Density: 1GB - Organization: 8M x 8 - Speed: 6ns - Voltage: 2.7V to 3.6V - Package: WFBGA-95 Product Status Active Memory Type Volatile Memory Format DRAM ...
Product Listing: MT40A1G8SA-062E:R Flash Memory Chips Product Parameters: - Memory Type: Flash - Density: 1GB - Organization: 8M x 8 - Speed: 6ns - Voltage: 2.7V to 3.6V - Package: WFBGA-95 Product Status Active Memory Type Volatile Memory Format DRAM ... more
Brand Name:Micron Technology Inc.
Model Number:MT40A1G8SA-062E:R
Place of Origin:Multi-origin
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S29AL032D90TFI040 NOR Flash Memory ICs Data Storage original Performance Characteristics High performance – Access times as fast as 70 ns Ultra low power consumption (typical values at 5 MHz) – 200 nA Automatic Sleep mode current – 200 nA standby mode ...
S29AL032D90TFI040 NOR Flash Memory ICs Data Storage original Performance Characteristics High performance – Access times as fast as 70 ns Ultra low power consumption (typical values at 5 MHz) – 200 nA Automatic Sleep mode current – 200 nA standby mode ... more
Brand Name:original
Model Number:S29AL032D90TFI040
Place of Origin:original
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#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:869.6202531645571px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:0;margin-left:0;width:750.... more
Series:MT41K256M16TW-107 IT:P, MT41K256M16TW-107 IT:P
Description:MT41K256M16TW-107 IT:P
Manufacturer Part Number:MT41K256M16TW-107 IT:P
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...150+ 256k Nonvolatile SRAM SS Replaces RAM Module IC FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 70 ns...
...150+ 256k Nonvolatile SRAM SS Replaces RAM Module IC FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 70 ns... more
Brand Name:DALLAS
Model Number:DS1230Y-150+
Place of Origin:Philippines
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NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 150 ns 28-EDIP
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 150 ns 28-EDIP more
Category:Integrated Circuits (ICs)
Memory
Memory
Product Status:Active
Mounting Type:Through Hole
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...IC Components TH58BVG2S3HTAI0 Find information here in stock.xlsx Product Attributes TYPE DESCRIPTION Category Integrated Circuits (ICs) Memory Memory Mfr Kioxia America, Inc. Series Benand™ Package Tray Product Status Active Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 4Gbit Memory Organization 512M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 25ns Access Time 25 ns...
...IC Components TH58BVG2S3HTAI0 Find information here in stock.xlsx Product Attributes TYPE DESCRIPTION Category Integrated Circuits (ICs) Memory Memory Mfr Kioxia America, Inc. Series Benand™ Package Tray Product Status Active Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 4Gbit Memory Organization 512M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 25ns Access Time 25 ns... more
Brand Name:Kioxia America, Inc.
Model Number:TH58BVG2S3HTAI0
Certification:ROHS
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NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 150 ns 28-EDIP
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 150 ns 28-EDIP more
Category:Integrated Circuits (ICs)
Memory
Memory
Product Status:Active
Mounting Type:Through Hole
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..., 32-bit CPU timers, External memory interface, Watchdog timer UART 2 CAN (#) 1 Sigma-delta filter 0 PWM (Ch) 16 Features for the TMS320F2812 High-performance static CMOS technology 150 MHz (6.67-ns cycle time) Low-power (1.8-V core at 135 MHz, 1.9-V
..., 32-bit CPU timers, External memory interface, Watchdog timer UART 2 CAN (#) 1 Sigma-delta filter 0 PWM (Ch) 16 Features for the TMS320F2812 High-performance static CMOS technology 150 MHz (6.67-ns cycle time) Low-power (1.8-V core at 135 MHz, 1.9-V more
Brand Name:Texas Instruments
Model Number:TMS320F2812ZAYA
Place of Origin:N/S
