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...Gate Bipolar Transistor Applications •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate...
...Gate Bipolar Transistor Applications •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate... more
Brand Name:Infineon
Model Number:IKW40N65H5
Place of Origin:Original
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...
G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ... more
Brand Name:ON/Fairchild
Model Number:G40N60UFD
Place of Origin:Original Factory
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... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high ...
... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high ... more
Model Number:MGW12N120D
Place of Origin:original factory
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... IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum ...
... IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum ... more
Brand Name:International Rectifier
Model Number:IRG4PH50UD
Part number:IRG4PH50UD
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...) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector ...
...) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector ... more
Brand Name:TOSHIBA
Model Number:GT20J101
Place of Origin:CHINA
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IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • ...
IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • ... more
Brand Name:Anterwell
Model Number:GP4068D
Place of Origin:original factory
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... Gate Bipolar Transistor The APT40GR120B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge...
... Gate Bipolar Transistor The APT40GR120B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge... more
Model Number:APT40GR120B-HXY
Td(off):195ns
Pd - Power Dissipation:417W
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LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output ...
LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output ... more
Brand Name:Lite-On Inc.
Model Number:LTV-356T-D
Place of Origin:original
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DS200IPCSG2A GE Insulated Gate Bipolar Transistor P3 Snubeer Board DIN-rail Mounting Turbine Control System Series Product Details: Brand Name GE Model DS200IPCSG2A Condition ...
DS200IPCSG2A GE Insulated Gate Bipolar Transistor P3 Snubeer Board DIN-rail Mounting Turbine Control System Series Product Details: Brand Name GE Model DS200IPCSG2A Condition ... more
Brand Name:GE
Model Number:DS200IPCSG2A
Place of Origin:USA
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PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply ...
PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply ... more
Brand Name:Texas Instruments
Model Number:TCAN1042GDQ1
Minimum Order Quantity:1 piece
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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *...
Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *... more
Brand Name:ABB
Model Number:FS450R17KE3/AGDR-71C S
Place of Origin:SWEDEN
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IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding ...
IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding ... more
Brand Name:Infineon Technologies
Model Number:IKWH50N65WR6XKSA1
Minimum Order Quantity:50pcs
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...Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A Power - Max 446W Switching Energy 995µJ (on), 1070µJ (off) Input Type Standard Gate...
...Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A Power - Max 446W Switching Energy 995µJ (on), 1070µJ (off) Input Type Standard Gate... more
Brand Name:Microsemi Corporation
Model Number:APT50GT60BRDQ2G
Place of Origin:Original
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.gtr-container { font-family: 'Arial', sans-serif; color: #333; line-height: 1.6; max-width: 1000px; margin: 0 auto; padding: 20px; background-color: #fff; border: 1px solid #e0e0e0; box-shadow: 0 2px 5px rgba(0,0,0,0.05); } .gtr-heading { font-weight: 700...
.gtr-container { font-family: 'Arial', sans-serif; color: #333; line-height: 1.6; max-width: 1000px; margin: 0 auto; padding: 20px; background-color: #fff; border: 1px solid #e0e0e0; box-shadow: 0 2px 5px rgba(0,0,0,0.05); } .gtr-heading { font-weight: 700... more
Brand Name:ZFeng
Payment Terms:L/C,D/A,D/P,T/T,Western Union,MoneyGram
Delivery Time:3 Days
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IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...
IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ... more
Brand Name:Texas Instruments
Model Number:TCAN1042GDQ1
Place of Origin:N/S
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IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227
IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227 more
Description:IGBT MOD 1200V 139A 658W SOT227
Category:Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules
Current - Collector (Ic) (Max):139 A
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...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor...
...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor... more
Brand Name:original
Model Number:TIP41C
Place of Origin:China
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...Bipolar Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-3 Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 1 Subcategory: Transistors...
...Bipolar Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-3 Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 1 Subcategory: Transistors... more
Brand Name:Original
Model Number:2N3792
Place of Origin:Original
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JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ...
JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ... more
Brand Name:Microchip / Microsemi
Model Number:JAN2N2222A
Place of Origin:ORIGINAL
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... Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr onsemi Series - Product Status Active Transistor ...
... Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr onsemi Series - Product Status Active Transistor ... more
Brand Name:onsemi
Model Number:MMUN2233LT1G
Place of Origin:USA
